H-890 DIODE Search Results
H-890 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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H-890 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSSF4500Contextual Info: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm |
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TSSF4500 TSSF4500 11-Mar-11 | |
Contextual Info: VSMF3710 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm |
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VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMF9700X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF9700X01 J-STD-020 AEC-Q101 VSMF9700X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VSMF9700X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF9700X01 J-STD-020 AEC-Q101 VSMF9700X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VSMF9700X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF9700X01 J-STD-020 AEC-Q101 VSMF9700X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
TSSF4500Contextual Info: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm |
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TSSF4500 TSSF4500 18-Jul-08 | |
Contextual Info: VSMF970011X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF970011X01 J-STD-020 AEC-Q101 VSMF970011X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm |
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VSMF3710 J-STD-020 2002/95/EC 2002/96/EC VSMF3710 18-Jul-08 | |
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF3710 VSMF3710 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW41 remote control
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VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 BPW41 remote control | |
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
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VSMF3710 VSMF3710 11-Mar-11 | |
VSMF3710
Abstract: VSMF3710-GS08 VSMF3710-GS18
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VSMF3710 J-STD-020 VSMF3710 18-Jul-08 VSMF3710-GS08 VSMF3710-GS18 | |
VSMF3710-GS18
Abstract: VSMF3710 VSMF3710-GS08
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VSMF3710 VSMF3710 18-Jul-08 VSMF3710-GS18 VSMF3710-GS08 | |
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diode Sr 26Contextual Info: VSMF2893SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • Peak wavelength: p = 890 nm |
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VSMF2893SLX01 AEC-Q101 VEMD2xx3SSLX01 VEMT2xx3SLX01 J-STD-020 VSMF2893SLX01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A diode Sr 26 | |
VSMF9700
Abstract: VSMF9700X01 rain SENSOR "rain sensor" VSMF9700-GS08 VSMF9700-GS18
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VSMF9700X01 J-STD-020 VSMF9700X01 AEC-Q101 18-Jul-08 VSMF9700 rain SENSOR "rain sensor" VSMF9700-GS08 VSMF9700-GS18 | |
Contextual Info: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
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VSMF9700X01 J-STD-020 VSMF9700X01 AEC-Q101 2002/trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
rain sensorContextual Info: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
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VSMF9700X01 J-STD-020 VSMF9700X01 AEC-Q101 2002/l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A rain sensor | |
Contextual Info: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
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VSMF9700X01 J-STD-020 VSMF9700X01 AEC-Q101 2002/hay 11-Mar-11 | |
Contextual Info: VSMF2890RGX01, VSMF2890GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH VSMF2890RGX01 FEATURES VSMF2890GX01 • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 |
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VSMF2890RGX01, VSMF2890GX01 VSMF2890RGX01 AEC-Q101 VSMF2890RG 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
VSMF2893RGX01Contextual Info: VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH FEATURES • Package type: surface mount VSMF2893RGX01 • Package form: GW, RGW VSMF2893GX01 • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.55 |
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VSMF2893RGX01, VSMF2893GX01 VSMF2893RGX01 AEC-Q101 VSMF2893X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VSMF2890RGX01, VSMF2890GX01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH VSMF2890RGX01 FEATURES VSMF2890GX01 • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified |
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VSMF2890RGX01, VSMF2890GX01 VSMF2890RGX01 AEC-Q101 VEMD2000X01 VSMF2890RG 2011/65/EU 2002/95/EC. 2002/95/EC | |
85163
Abstract: VSMF2890GX01 VSMF2890RGX01 vsmf2890
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VSMF2890RGX01, VSMF2890GX01 VSMF2890RGX01 AEC-Q101 VSMF2890RG 11-Mar-11 85163 VSMF2890GX01 vsmf2890 | |
Contextual Info: TSMF1000, TSMF1020, TSMF1030 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES TSMF1000 • Package type: surface mount TSMF1020 • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7 |
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TSMF1000, TSMF1020, TSMF1030 TSMF1000 TSMF1020 TEMD1000 J-STD-020 2002/95/EC 2002/96/EC |