H02N60SJ Search Results
H02N60SJ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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H02N60SJ | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | 76.01KB | 6 |
H02N60SJ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
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Original |
MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749 |