Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    H2A TRANSISTOR Search Results

    H2A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H2A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A608 transistor pnp

    Abstract: transistor A608 A608 A608 transistor bta608 pnp transistor a608 BTA608A3 bta60 C306A BTA6
    Text: Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA608A3 Features • The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF C306A3-S BTA608A3 BTA608A3 BTC536A3 UL94V-0 A608 transistor pnp transistor A608 A608 A608 transistor bta608 pnp transistor a608 bta60 C306A BTA6

    C945 pin spec

    Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
    Text: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.


    Original     		PDF C204A3 BTC945A3 BTC945A3 BTA733A3. UL94V-0 C945 pin spec TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet

    n6718

    Abstract: NPN transistor ECB TO-92 IC350 IC35 H2A transistor
    Text: Spec. No. : C823A3 Issued Date : 2006.10.16 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features


    Original     		PDF C823A3 BTN6718A3 BTN6718A3 UL94V-0 n6718 NPN transistor ECB TO-92 IC350 IC35 H2A transistor

    NH10

    Abstract: BTNH10A3
    Text: Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date :2006.08.16 Page No. : 1/5 CYStech Electronics Corp. VHF/UHF NPN Epitaxial Planar Transistor BTNH10A3 Description The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.


    Original     		PDF C201A3-H BTNH10A3 BTNH10A3 UL94V-0 NH10

    a733 transistor

    Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
    Text: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF C306A3 BTA733A3 BTA733A3 BTC945A3. UL94V-0 a733 transistor A7333 A733 P C306A Transistor a733 A733 BTC945A3

    transistor h2a

    Abstract: diode marking H2 H2N5089
    Text: HI-SINCERITY Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6273 H2N5089 183oC 217oC 260oC transistor h2a diode marking H2 H2N5089

    HMPSH10

    Abstract: HA2001
    Text: HI-SINCERITY Spec. No. : HA200105 Issued Date : 2000.11.01 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.


    Original     		PDF HA200105 HMPSH10 HMPSH10 Dissipati60 183oC 217oC 260oC HA2001

    transistor h2a

    Abstract: HSB564A
    Text: HI-SINCERITY Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB564A is designed for general purpose low frequency power amplifier applications.


    Original     		PDF HE6519 HSB564A HSB564A 183oC 217oC 260oC transistor h2a

    HBF422

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6404 Issued Date : 1993.03.18 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6404 HBF422 183oC 217oC 240oC 260oC HBF422

    transistor h2a

    Abstract: diode marking H2 vbe 10v, vce 500v NPN Transistor HTL145 HE645
    Text: HI-SINCERITY Spec. No. : HE6454 Issued Date : 1993.02.24 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HTL145 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTL145 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.


    Original     		PDF HE6454 HTL145 HTL145 183oC 217oC 260oC transistor h2a diode marking H2 vbe 10v, vce 500v NPN Transistor HE645

    c351a

    Abstract: N4401 DTC114 DTA114EA3 DTC114E DTC114EA3
    Text: Spec. No. : C351A3 Issued Date : 2003.08.20 Revised Date :2003.09.29 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTC114EA3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF C351A3 DTC114EA3 DTA114EA3 Colle50 c351a N4401 DTC114 DTA114EA3 DTC114E DTC114EA3

    OC 140 germanium transistor

    Abstract: HSD879 Germanium Transistor transistor h2a
    Text: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor


    Original     		PDF HA200207 HSD879 183oC 217oC 260oC OC 140 germanium transistor HSD879 Germanium Transistor transistor h2a

    700 H2A

    Abstract: HE9018
    Text: HI-SINCERITY Spec. No. : HE6120 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HE9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner.


    Original     		PDF HE6120 HE9018 HE9018 183oC 217oC 260oC 700 H2A

    HA3669

    Abstract: transistor ha3669 diode marking H2
    Text: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching


    Original     		PDF HA200210 HA3669 HA3669 183oC 217oC 260oC transistor ha3669 diode marking H2

    HE8550

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull


    Original     		PDF HE6114 HE8550 HE8550 150oC 200oC 183oC 217oC 260oC 245oC 10sec

    SD965

    Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
    Text: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6537 HSD965 HSD965 183oC 217oC 260oC SD965 equivalent transistor HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6527 HSC2228Y HSC2228Y 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.


    Original     		PDF HE6267 H2N3417 H2N3417 183oC 217oC 260oC

    ht-666

    Abstract: transistor h2a HT666 HE6464
    Text: HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.


    Original     		PDF HE6464 HT666 HT666 183oC 217oC 260oC ht-666 transistor h2a HE6464

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6232 H2N6426 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4126 is designed for general purpose switching and amplifier applications. TO-92


    Original     		PDF HE6216 H2N4126 H2N4126 H2N4124 625mW 183oC 217oC 260oC

    transistor h2a

    Abstract: HMPSA56 H2A transistor HE631
    Text: HI-SINCERITY Spec. No. : HE6311 Issued Date : 1992.09.09 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSA56 PNP SILICON TRANSISTOR Description Amplifier transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6311 HMPSA56 183oC 217oC 260oC transistor h2a HMPSA56 H2A transistor HE631

    ha2001

    Abstract: HBC558 transistor BC 245 c
    Text: HI-SINCERITY Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HA200104 HBC558 HBC558 183oC 217oC 260oC ha2001 transistor BC 245 c