H2B SOT23 Search Results
H2B SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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H2B SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ic 556Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB |
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BCX17LT1 BCX18LT1 BCX19LT1 BCX20LT1 236AB) BCX20LT1 BCX17LT1 ic 556 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc |
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BCW68GLT1 236AB) | |
marking code 5a sot-363Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 2 BASE 1 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –45 V Collector – Base Voltage |
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BC807-16LT1 BC807-25LT1 BC807-40LT1 236AB) marking code 5a sot-363 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage Rating VCEO – 300 Vdc Collector-Base Voltage |
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BF721T1 318E-04, O-261AA) | |
SC-70ML
Abstract: marking CER 5-pin
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BF720T1 318E-04, O-261AA) SC-70ML marking CER 5-pin | |
transistor sc59 markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a |
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DTC114TE DTC114TE 416/SC transistor sc59 marking | |
sot-23 Marking 3D
Abstract: SC59 Marking 3D MMBTH81LT1
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MMBTH81LT1 236AB) sot-23 Marking 3D SC59 Marking 3D MMBTH81LT1 | |
Sc59
Abstract: marking H2A sot-23
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OT-223 BSP16T1 318E-04, O-261AA Sc59 marking H2A sot-23 | |
PNP TRANSISTORS SC-70 SOT363Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device • Designed for UHF/VHF Amplifier Applications 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA 2 EMITTER 3 MAXIMUM RATINGS |
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MMBTH69LT1 236AB) PNP TRANSISTORS SC-70 SOT363 | |
SOT 363 marking CODE 2HContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector – Emitter Voltage |
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) SOT 363 marking CODE 2H | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage |
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BSS64LT1 236AB) 15NOT | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 V Collector – Base Voltage |
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BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor PNP/NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 MMPQ6700 Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector – Base Voltage |
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MMPQ6700 | |
Gate Driver SOT-363 Marking Code G
Abstract: MSD101
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OT-23 Gate Driver SOT-363 Marking Code G MSD101 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –350 Vdc Collector – Base Voltage |
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BF493S 226AA) 20NOT | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF844 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO 450 Vdc Emitter – Base Voltage |
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BF844 226AA) | |
6aa markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA114YE 416/SC 6aa marking | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for |
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OT-223 BCP68T1 inch/1000 BCP68T3 inch/4000 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ2483 MPQ2484* NPN Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device NPN 1 2 3 4 5 6 7 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage |
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MPQ2483 MPQ2484 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for |
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OT-223 BCP69T1 inch/1000 BCP69T3 inch/4000 | |
marking 6AA SODContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is |
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323/SC MMBT2222AWT1 323/SC marking 6AA SOD | |
bf199 equivalent
Abstract: data bf199 RC-1008b transistor NPN BF199 bf199 test
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BF199 226AA) bf199 equivalent data bf199 RC-1008b transistor NPN BF199 bf199 test | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is |
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OT-223 BSP62T1 inch/1000 BSP62T3 inch/4000 BSP52T1 BSP62T1 | |
BF423 EQUIVALENT
Abstract: BF421 EQUIVALENT
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BF421 BF423 BF421 226AA) BF423 EQUIVALENT BF421 EQUIVALENT |