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    H5N2508DS Search Results

    H5N2508DS Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2508DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation

    H5N2508DS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H5N2508DS Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2508DS Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N2508DS Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 7; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.48; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 450; toff ( us) typ: 0.047; Package: DPAK (S) Original PDF

    H5N2508DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA0076

    Abstract: ADE-208-1377 H5N2508DL H5N2508DS
    Text: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1377 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.48 typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)


    Original     		PDF H5N2508DL, H5N2508DS ADE-208-1377 H5N2508DL Hitachi DSA0076 ADE-208-1377 H5N2508DL H5N2508DS

    ADE-208-1377

    Abstract: H5N2508DSTL-E dpak code H5N2508DL H5N2508DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 Previous: ADE-208-1377 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.48 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V)


    Original     		PDF H5N2508DL, H5N2508DS REJ03G1108-0200 ADE-208-1377) PRSS0004ZD-B PRSS0004ZD-C ADE-208-1377 H5N2508DSTL-E dpak code H5N2508DL H5N2508DS PRSS0004ZD-B PRSS0004ZD-C

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    HAT2180RP

    Abstract: HAT1125H HA17341 HAT1128R HAT1125 2SK3235 smps circuit diagrams dvd and audio system hat2211 hat2180 circuit diagram for 48v automatic battery charger
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0013-0100/Rev HAT2180RP HAT1125H HA17341 HAT1128R HAT1125 2SK3235 smps circuit diagrams dvd and audio system hat2211 hat2180 circuit diagram for 48v automatic battery charger

    ADE-208-1377

    Abstract: H5N2508DL H5N2508DS H5N2508DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    LFPAK package

    Abstract: HAT2064R HAT2099H HA16163 converter DC-DC SOP-8 synchronous rectification H5N2508DS HA17L431ALP HAT2058R HAT2077R
    Text: For Communication Equipment High-Efficiency DC/DC Converter Power Supplies Features and Merits Features Merits Low on-resistance Improved power supply efficiency Low Qg, low Qgd Low drive loss energy saving in standby mode High-speed switching Low switching loss


    Original     		PDF H7N1002LS/LM HAT2064R HAT2118R* HAT2116H HAT2096H HAT2099H FY12AAJ-03F FY14AAJ-03F LFPAK package HAT2064R HAT2099H HA16163 converter DC-DC SOP-8 synchronous rectification H5N2508DS HA17L431ALP HAT2058R HAT2077R

    ADE-208-1377

    Abstract: H5N2508DL H5N2508DS
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF