H5N2509P Search Results

Hitachi MOSFET

Abstract: Hitachi DSA002730
Contextual Info: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)

Hitachi DSA0076

Abstract: H5N2509P
Contextual Info: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.

H5N2509P

Abstract: H5N2509P-E PRSS0004ZE-A SC-65
Contextual Info: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

H5N2509P

Abstract: H5N2509P-E PRSS0004ZE-A SC-65
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

H5N2509P

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

m61266

Abstract: M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP
Contextual Info: 2005.10 Everywhere you imagine. _ ICs for video signals j i / Z t t Z r f s n y w w w .re n e sa s.co m • - « i * U -'^ 3 ^ t? |gr 0 W & à i T 3 Pursuing high quality with one-chip solutions R enesas ICs for video signals. c R T *» è *f« a o f '^ '/ U

rjp3053

Abstract: RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065
Contextual Info: April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE sat High-speed switching PDP System PDP trends Scan IC Y Panel Sustain circuit X Power device High breakdown

H5N2509P

Abstract: Hitachi DSA00303
Contextual Info: ߅ቴ᭽ฦ૏ ⾗ᢱਛߩ‫ޟ‬ᣣ┙⵾૞ᚲ‫ޔޠ‬ ‫ޟ‬ᣣ┙:‫╬ޠ‬ฬ⒓ߩᩣᑼળ␠࡞ࡀࠨࠬ࠹ࠢࡁࡠࠫ߳ߩᄌᦝߦߟ޿ߡ ‫ޓ‬ᐕ᦬ᣣࠍએߞߡਃ⪉㔚ᯏᩣᑼળ␠෸߮ᩣᑼળ␠ᣣ┙⵾૞ᚲߩࡑࠗࠦࡦ‫ޔࠢ࠶ࠫࡠޔ‬

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

TO220CFM

Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D

H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility