H6B 25 Search Results

Contextual Info: DEGSON ELECTRONICS CO., LTD. DEGSON /• g , M i f e T tD l* l f t re f i T Ä : JHLSäS 1 ÍP Jh sS ± 5 6 : § l ä * £ (2 M ) H6B-BK-1 L tm m ti HDD-024-M H6B-SE-2B-M20(PG13.5/PG16) w H6B-BK-1 L-CV r HDD-024-F 1 H6B-SEH-2B-M25(PG21) j 70 80 C T -y 43

Contextual Info: ;@3-'A 005@ 5WWT>?Bb $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ . !0  V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) , =L"`_#%^Ri%- [   Y V 2 AIG6 ADL <6I: 8 =6G<: + X%eja O )'+22 "   + _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A

6dj8

Contextual Info: ;@3,'A*,'5@ 5WWT>?BC> $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ V DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )',.) " *2 _< * X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A

d9dg

Contextual Info: ;@3-'A ,'5@ 5WWT>?Bb $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ . !0  V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) )'+.) W , =L"`_#%^Ri%- [   Y V 2 AIG6 ADL <6I: 8 =6G<: + X%eja O   +/ _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A

D9 DG

Abstract: d9dg
Contextual Info: ;@3-'A ,5@ 5WWT>?Bb $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ . !0  V 4 DGA 9L>9: 7: HI/ =L%`_ >C 1,   # JAAE6@ 1 [%^Ri /.) , =L"`_#%^Ri%- [   Y V2 AIG6 ADL <6I: 8 =6G<: O )'*+. " + X%eja ., _< V" MIG: B : 9K 9IG6I: 9 V% ><= E: 6@8 JGG: CI8

6dj8

Contextual Info: ;@3,'A 005@ 5WWT>?BC> $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ V )DL: HI;><JG: D;B : G>I/ , + M . < V2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )'+22 " +, _< * X%eja V" MIG: B : 9K 9IG6I: 9 V% ><= E: 6@8 JGG: CI8 6E67>A >IN V- 7 ;G: : A

D9 DG

Contextual Info: 9@B,'A, '4@ 4WWT>?BC> $ ;B 1 = '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ V )DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )'.+) " *, _< * X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A

8D58

Contextual Info: ;@3,'A*005@ 5WWT>?BC> $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ V DL: HI;><JG: D; B : G>I/ , + M . < V2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )',22 " *0 _< * X%eja V" MIG: B : 9K 9IG6I: 9 V% ><= E: 6@8 JGG: CI8 6E67>A >IN V- 7 ;G: : A

Contextual Info: ;@3-'A 005@ 5WWT>?Bb $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ . !0 8 M[%^Ri V DL: HI;><JG: D; B : G>I/ HGiJX /.) , =L"`_#%^Ri%- [   Y V 2 AIG6 ADL <6I: 8 =6G<: O )'*22 " + X%eja ,B _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN

Contextual Info: 9@B,'A, '4@ 4WWT>?BC> $ ;B 1 = '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ V )DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )'.+) " *, _< * X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A

D9 DG

Abstract: D9DG
Contextual Info: ;@30'A ='5* 5WWT>?Ba $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ U DL: HI;><JG: D; B : G>I/ HG M . X U " MIG: B : 9K 9IG6I: 9 - !0 8  C6+.t< 2) O + =L"`_#%^Ri  *') W ,- _< , C   X * X%eja U % ><= E: 6@8 JGG: CI8 6E67>A >IN U . J6A >;>: 9 for industrial grade applications 68

D9 DG transistor

Abstract: D9 DG d9dg transistor marking 6c9 D9 DG transistor marking
Contextual Info: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: V !0 8M[^Ri ./) O R =L"`_#%^Ri )',22 " *0 _< Q X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A : 69 EA

Contextual Info: B@9 ,>-'475 4WWT=?BC= $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ . !0  V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: 1?B 6M 0/* O , =L#`_$&^Ri *(-* " = +-(. 9 V 2 AIG6 ADL <6I: 8 =6G<: I@'MH,0, V "MIG: B : 94 )U3 G6I: 9

diode AY 101

Contextual Info: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L฀฀1[%^Ri V฀ DL:HI฀;><JG: D; B:G>I฀/ HG฀M฀.@ /.) R =L"`_#%^Ri@T [฀Y V฀2AIG6฀ADL฀<6I:฀8=6G<: O )',1.  Q X%eja *0 _< V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

Contextual Info: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V฀ DL:HI฀;><JG:฀D;฀B:G>I฀/,+฀M฀.X V฀2AIG6฀ADL฀<6I:฀8=6G<: V !0฀8M[^Ri ./) O R =L"`_#%^Ri )',22  *0 _< Q X%eja V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

8D58

Contextual Info: B@3 ,>-'586 5WWT=?BC= $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 8MI[\YMZ . !0  V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: 1?B 6M 0/* O , =L#`_$&^Ri *(-* " = +-(. 9 V 2 AIG6 ADL <6I: 8 =6G<: I@'MH,*?I V "MIG: B : 94 )U3 G6I: 9

Contextual Info: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0฀฀1[%^Ri V฀ DL:HI฀;><JG: D; B:G>I฀/ HGiJX /.) R =L"`_#%^Ri@T [฀Y V฀2AIG6฀ADL฀<6I:฀8=6G<: O )'*/.  Q X%eja ,2 _< V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

D9 DG transistor

Abstract: marking code 6C8 6dj8 transistor DJ marking transistor marking 6c9 IPA60R385CP diode marking 7n 6b102
Contextual Info: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L  V DL: HI;><JG: D; B : G>I/ HG M . @ 1 [%^Ri /.) R =L"`_#%^Ri@T [   Y V 2 AIG6 ADL <6I: 8 =6G<: O )',1. " *0 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A

6dj8

Abstract: D9 DG transistor marking code 6C8 6b102 IPA60R165CP DIODE marking D9 MARKING GC INFINEON
Contextual Info: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0  V DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) R =L"`_#%^Ri@T [   Y V 2 AIG6 ADL <6I: 8 =6G<: O )'*/. " ,2 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A

4506 gh

Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Contextual Info: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:

SN54AS808B

Abstract: SN74AS808B s134b 10114Y
Contextual Info: SN74AS808B, SN54AS808B HEX 2-INPUT AND DRIVERS D2661, D E C E M B E R 1 9 8 2 - R E V IS E D M A Y 1986 • High Capacitive Drive Capability SN54AS808B . . . J PACKAGE SN74AS808B . .D W O R N PACKAGE TOP VIEW 'AS808B has Typical Delay Time of 3.2 ns (C l = 50 pF) and Typical Power Dissipation

H bridge drive

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 1ch Piezo Driver built-in 15MHz Oscillator TYPE BH6456GUL FEATURES ・Built-in 15MHz Oscillator ・Built in 1ch H Bridge Driver ・2-wire serial interface I2C-compatible Absolute maximum ratings (Ta=+25°C)

H6B transistor

Abstract: H7B transistor powerload AD8030ARJ-R2
Contextual Info: Low Power, High Speed Rail-to-Rail Input/Output Amplifier AD8029/AD8030 FEATURES Low power 1.3 mA supply current/amplifier High speed 125 MHz, –3 dB bandwidth G = +1 60 V/µs slew rate 80 ns settling time to 0.1% Rail-to-rail input and output No phase reversal

H6B transistor

Abstract: AD8029 AD8030 AD8040 SC70-6 SOIC-14
Contextual Info: Low Power, High Speed Rail-to-Rail Input/Output Amplifier AD8029/AD8030/AD8040 CONNECTION DIAGRAMS Battery-powered instrumentation Filters A-to-D drivers Buffering DISABLE 7 +VS +IN 3 6 VOUT –VS 4 5 NC NC = NO CONNECT VOUT 1 Figure 1. SOIC-8 R –VS 2