HA1919A Search Results

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

HA1120

Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
Contextual Info: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf

HA1930A

Abstract: 1m9141 1NS471A 1M914
Contextual Info: CHIP DIODES UHF I VHF TUNING DIODES HIGH 0 FOR MANY UHF -VH F USES LOWEST LEAKAGE HIGH 0 TYPE NO RATIO Û4 0 C2/CM 50 M H; min/mi* C2/CJ0 min/m»* HYPERABRUPT HIGH Q ABRUPT GOOD Q4 50 mm RATIO TYPf NO R ATIO C2/C30 mm/m»* 1YPE #0 P A S S IV A T E D A F T E R TYPE

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted

1NS14

Abstract: ir0004 1M11A S01217A HA1I34A SQ1214A SQ1215A 2S0 765 MV18S VI634
Contextual Info: C Æ ISO elect HERMETICALLY SEALED G L A S S PA C K A G ED TUNING DIO DES A B R U P T - H Y P E R A B R U P T Uf E L E C T R IC A L CH A R A CTER ISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS Otode Cap. (CT)* £10% 94V/1 MHi TYPE Pf NO