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    HALBLEITER TRANSISTORS 1975 Search Results

    HALBLEITER TRANSISTORS 1975 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HALBLEITER TRANSISTORS 1975 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Denso L 918

    Abstract: Denso L 918 8 grundig sc 303 ECI T DAX kostal DER-256 EUPEC T 558 F GPS chip herr der ringe SCHNEIDER PLC
    Text: Bericht über die Geschäftsentwicklung bis März 2000. Umschlag 11.07.2000 18:11 Uhr Seite U1 INFINEON TECHNOLOGIES AG Postfach 80 09 49 81609 München Kontakt für Anleger und Analysten Abteilung Investor Relations Telefon 0 89 - 23 42 66 55 Telefax 0 89 - 2 34 71 84 84


    Original     		PDF B191-H7561 0398-00-JWT Denso L 918 Denso L 918 8 grundig sc 303 ECI T DAX kostal DER-256 EUPEC T 558 F GPS chip herr der ringe SCHNEIDER PLC

    GSC351-HYB1900

    Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1
    Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage


    Original     		PDF MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GSC351-HYB1900 J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin

    GRM31CR61H225KA88L

    Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage


    Original     		PDF MD7IC2050N MD7IC2050N MD7IC205ubsidiaries, MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GRM31CR61H225KA88L j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050NBR1 A114

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage


    Original     		PDF MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1

    ATC600S10

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		PDF MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10

    ATC600S2R7BT250XT

    Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		PDF MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT

    CW12010T0050GBK

    Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		PDF MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		PDF MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3

    *J532

    Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    TE 2395 motorola

    Abstract: rz2 d12 334 te 2395 MC33991DW te 2395 MC33991 390422 4184-60 ST11 Step motor driver ATE8
    Text: Freescale Semiconductor Technical Data Document Number: MC33991 Rev. 2.0, 11/2006 Gauge Driver Integrated Circuit 33991 This 33991 is a single packaged, Serial Peripheral Interface SPI controlled, dual stepper motor gauge driver Integrated Circuit (IC).


    Original     		PDF MC33991 TE 2395 motorola rz2 d12 334 te 2395 MC33991DW te 2395 MC33991 390422 4184-60 ST11 Step motor driver ATE8

    rz2 d12

    Abstract: counter 74492 -20/ITT rz2 d12
    Text: Freescale Semiconductor Technical Data Document Number: MC33991 Rev. 2.0, 11/2006 Gauge Driver Integrated Circuit 33991 This 33991 is a single packaged, Serial Peripheral Interface SPI controlled, dual stepper motor gauge driver Integrated Circuit (IC).


    Original     		PDF MC33991 rz2 d12 counter 74492 -20/ITT rz2 d12

    56f8000 peripheral reference manual

    Abstract: freescale 56f8 peripheral manual MC56F8000RM 56800E 56F8000 56F801X DSP56800E inverter 6kw 56F80 a6pe
    Text: 56F801X Peripheral Reference Manual 56F8000 16-bit Digital Signal Controllers DSC 12 13 14 15 16 MC56F8000RM Rev. 5 08/2007 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary to have all three documents. They are: DSP56800E Reference Manual, 56F801X Peripheral User


    Original     		PDF 56F801X 56F8000 16-bit MC56F8000RM DSP56800E 56F801X 56800E 56f8000 peripheral reference manual freescale 56f8 peripheral manual MC56F8000RM 56F8000 inverter 6kw 56F80 a6pe

    K 3531

    Abstract: freescale superflash
    Text: 56F8300 Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 9 01/2007 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary


    Original     		PDF 56F8300 56F8100 56F8300 16-bit MC56F8300UM DSP56800E MC56F8300 MC56F8300UM/D K 3531 freescale superflash

    Bosch hfm

    Abstract: 7815 voltage regulator 56800E 56F8100 56F8300 DSP56800E MC56F8300 MC56F8300UM DIN 1707 pwm automotive MOTOR CONTROL
    Text: 56F8300 Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 6 11/2004 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary


    Original     		PDF 56F8300 56F8100 16-bit MC56F8300UM DSP56800E MC56F8300 MC56F8300UM/D 56800E Bosch hfm 7815 voltage regulator 56F8300 MC56F8300UM DIN 1707 pwm automotive MOTOR CONTROL

    Bosch HFM 5

    Abstract: IC transistor linear handbook freescale superflash
    Text: Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 10 10/2007 freescale.com 17 18 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently


    Original     		PDF MC56F8300UM 56F8300 56F8100 56F8300 16-bit DSP56800E MC56F8300 Bosch HFM 5 IC transistor linear handbook freescale superflash

    TESLA KY 703

    Abstract: TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig
    Text: SERVICE-MITTEILUNGEN V EB IN D U ST R IE V E R T R IE B RU N D FU N K UND FE R N SE H E N r a d i o -television Als Weiterentwicklung des bekannten Rundfunkgerätes SELECT wird aus der Sozia­ listischen Republik Rumä­ nien der Heimempfänger R O Y A L AUSGABE:


    OCR Scan     		PDF III/18/379 TESLA KY 703 TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig

    maa 502

    Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
    Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik


    OCR Scan     		PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    Halbleiterbauelemente DDR

    Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder


    OCR Scan     		PDF

    halbleiter index transistor

    Abstract: National Semiconductor Linear Data Book
    Text: 3 4 0 0 0 I SO PLAIN! AR C M O S DATA BOOK FAIRCHILD S E M IC O N D U C T O R 464 Ellis Street, Mountain View, California 94042 1975 Sem iconductor C om ponents Group, Fairchild Camera and Instrum ent C orpo ra tio n /4 6 4 Ellis Street, M ountain View , C alifornia 9 4 0 4 2 / 4 1 5 9 6 2 -5 0 1 1 /T W X 9 1 0 -3 7 9 -6 4 3 5


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931