HALF BRIDGE ULTRASONIC Search Results

MIC4102YM TR

Abstract: buck converter 110v to 100 MIC4102 IC MOSFET QG PUSH PULL MOSFET DRIVER ultrasonic driver MIC4102BM MIC4102YM MIC4103 converter 11uA for TTL
Contextual Info: MIC4102 100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS General Description Features The MIC4102 is a high frequency, 100V Half Bridge MOSFET driver IC featuring internal anti-shoot-through protection. The low-side and high-side gate drivers are

IRGTI090U06

Abstract: IGBT 75 D
Contextual Info: Alternation^ Sor]Rectifier PD'"Í4B IRGTI090U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT Half-Bridge VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

9956B

Abstract: c832 c836 diode c832 IRGTI140U06 DIODE 2FL C834 power
Contextual Info: PD-9.956B kitemational [tor]Rectifier IRGTI140U06 "HALF-BRIDGE“ IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ‘tail"

IRGTI200F06

Contextual Info: bitemational ^Rectifier PD-9.968B IRGTI200F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description

IRGTI165F06

Contextual Info: PD9.959B International HRectifier IRGTI165F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design .Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses lc = 165A

C818

Abstract: rq20 C814 c815
Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

tr c828

Abstract: tr c828 c829 C828 transistors tr c829 c829 c828 C-828 IRGTI115U06 c826
Contextual Info: kïtemational goi Rectifier PD'99558 IRGTI115U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

C818

Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

c214 diode

Abstract: IRGTI065F06 957B C-218 D-16 bsk 45
Contextual Info: International S Rectifier PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant »Switching-Loss Rating includes all "tail“ losses Vœ = 600V

WE VQE 11 E

Abstract: DIODE 65A IRGT1065F06 FF1000
Contextual Info: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A

DIODE C817

Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

C819

Abstract: diode C819 IRGTI090U06 c821 ls diode c820 R/smd diode c819 954B D-16 termnc
Contextual Info: International ll&R]Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT Vce = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"

C828 transistors

Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Contextual Info: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA  V mA - The ITC135’s optocoupler provides for half-wave

Contextual Info: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"

ic laf 0001

Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
Contextual Info: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses

IRGTI090U06

Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
Contextual Info: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"

transistors c216

Contextual Info: International ItorIRectifier P D -9.957B IRGTI065F06 Fast Speed IG BT "HALF-BRIDGE" IG B T IN T-A -P A K »Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses

Full-Wave Bridge Rectifier

Abstract: 10PA ITC135 ITC135P ITC135PTR J-STD-033
Contextual Info: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA  V mA - The ITC135’s optocoupler provides for half-wave

Diode C219

Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Contextual Info: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”

IX21844

Contextual Info: IX21844 High Voltage Half-Bridge Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- Source/Sink VBIAS Description Rating Units 600 V 1.4 / 1.8 A 10-20 V The IX21844 is a high voltage IC that can drive high speed MOSFETs and IGBTs that operate up to

Diode C219

Abstract: resistance 220 ohm diode 1n6
Contextual Info: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"

958b

Abstract: AS36 IFR 740 IRGTI120F06
Contextual Info: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"

IRGTI165F06

Abstract: c227 diode c230 diode
Contextual Info: PO9.950B biternational Rectifier IRGTI165F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • R u g ged Design •S im p le g ate-d rive .F a s t operation up to 1 0 K H z hard switching, or 5 0 K H z resonant .S w itch in g -L o s s Rating includes all “tail"