HAMAMATSU PHOTODIODE 256 ELEMENTS Search Results

256CH

Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,

R800-10-012-20-001

Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,

Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,

Contextual Info: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process

G7233-256

Abstract: G7230-256 S7233 Hamamatsu photodiode 256 elements InGaAs photodiode array chip InGaAs PIN photodiode Long Wavelength 2.6 phct C7221 G7230-128 G7231-128
Contextual Info: InGaAs LINEAR IMAGE SENSORS G7230/G7231/G7233 SERIES HAMAMATSU PRELIMINARY DATA Oct. 1997 NIR applications 0.9 to 1.7 |jm/1.2 to 2.6 pm FEATURES • Spectral response range G7230/G7231 series: 0.9 to 1.7 pm G7233 series: 1.2 to 2.6 pm • G7231/G7233 series:

Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be

Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be

S8865-256G

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

photodiode 256 elements

Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

LEMO FFA-00

Abstract: Rs422 timing diagram LEMO FFA.00 image sensor x-ray x-ray cmos image sensor charge amplifier x-ray biomedical sensor LEMO C7410 scintillator
Contextual Info: IMAGE SENSOR Flat panel sensor C7410 Acquires digital X-ray images in real time Hamamatsu now introduces a state-of-the-art X-ray imaging device, the model C7410 Flat Panel Sensor. This is a key device for digital X-ray imaging such as in non-destructive inspection and biomedical analysis, and delivers high-quality images at a TV scan rate.

c1837

Abstract: ir photodiode amplifier near IR photodiodes low noise ir photodiode amplifier photodiode 1024 elements silicon S-2318 s2301 S23011 photodiode 256 elements silicon photodiode 512 elements
Contextual Info: HAMAMATSU CORP 11E D • 422^01 35,38 and 46 ELEMENT PHOTODIODE ARRAYS Hamamatsu offers new series of linear photodiode arrays designed for multichannel spectrophotometers. These photodiode arrays feature wide spectral response from ultraviolet to near infrared and low cross-talk between

Contextual Info: Photodiode arrays with amplifiers S11865-64G/-128G/-256G S11866-64G-02/-128G-02 Photodiode arrays combined with signal processing IC for X-ray detection The S11865/S11866 series These are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. X-ray tolerance has been improved compared to the previous products S8865/S8866 series .

Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

s886564g

Abstract: KMPDC0072EA
Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

Durtal

Abstract: x-ray tube S8865-64G IC 74hc32 image sensor x-ray S8865-256G sensor x-ray c911 S8865 C9118 x-ray tube datasheet
Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

MS3904

Abstract: mos 4069
Contextual Info: HAMAMATSU SERIAL/CURRENT OUTPUT TYPE MOS LINEAR IMAGE SENSORS S3901, S3904 SERIES TEC H N IC A L DATA Wide Sensitive Area 2.5mm Photodiode Height , High UV Sensitivity, Excellent Photometric Capabilities, Low Power Consumption FEATURES • Wide photosensitive area

S2301-512Q

Abstract: S2304-512Q S2301-512 S2304 s2301 S2301-256Q S2304-1024Q
Contextual Info: HAMAMATSU CORP 11E D HAMAMATSU TECHNICAL DATA 0QGSS51 € c € • PCD LINEAR IMAGE SENSORS S2301 SERIES t=v/-s s * 5 0 /¿ m € 1 P itc h T yp e) The S2301 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically

st s3931

Abstract: 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp
Contextual Info: H AM A M A TSU THERM O ELECTRIC ALLY-CO OLED TECHNICAL DATA N-MOS LINEAR IMAGE SENSORS S5930, S5931 SERIES A built-in therm oelectric cooler enables highly stable m easurem ents even at very-low -light level FEATURES • Wide photosensitive area Pixel pitch: 50 n m S5930 Series , 25/* m (S5931 Series)

Contextual Info: Photodiode arrays with amplifier S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive

S5463-512Q

Abstract: S5463-1024Q S5463 S5462-256Q S5464-1024Q S5461 S5462 pmx2 S5464-1024 quartz delay line
Contextual Info: C-MOS HAMAMATSU Linear Image Sensors S5461, S5462, S5463, S5464 Series Linear Image Sensors Built-in C-MOS Integration Amplifier FEATURES •B u ilt-in C-MOS integration am plifier and clamp circuit for signal readout •F a c ilita te s to configure the external signal processing circuit

Contextual Info: Photodiode arrays with amplifier S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive

Selection guide

Abstract: Infrared detectors P13243-011MA
Contextual Info: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,