HBT TRANSISTOR Search Results
HBT TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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| TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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HBT TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SGA-1263Z
Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
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SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a | |
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Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain |
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SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS111011 | |
SGA1263Z
Abstract: SGA1263
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SGA1263Z DCto4000MH SGA1263Z DCto4000MHz OT-363 50GHz DS111011 SGA1263 | |
SGA-1263
Abstract: SGA-1263Z BY 356
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SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356 | |
trace code marking RFMD
Abstract: SGA-1263 SGA-1263Z
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SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z | |
MARKING HBT
Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
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SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor | |
SGA8343z
Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
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SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot | |
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Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to |
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SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz | |
SGA8343Z
Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
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SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series | |
SGA-8343Z
Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
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SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 | |
A83Z
Abstract: A83Z data a83 sot transistor A83 sga8343z SGA-8343 SGA-8343Z RFMD sga-8343Z 34A83
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SGA-8343 OT-343 SGA-8343Z EDS-101845 SGA-8343 A83Z A83Z data a83 sot transistor A83 sga8343z SGA-8343Z RFMD sga-8343Z 34A83 | |
samsung bluetooth
Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
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SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343 | |
MCH185A100JK
Abstract: transistor Bc 540 pin transistor Bc 540
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SPA1526Z SPA1526Z SOF-26 SOF-26 Matchi9421 SPA1526ZSQ MCH185A100JK transistor Bc 540 pin transistor Bc 540 | |
SPA1426Z
Abstract: TAJA105K020R
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SPA1426Z SPA1426Z SOF-26 SOF-26 DS110610 SPA1426ZSQ TAJA105K020R | |
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Contextual Info: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable |
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SXB4089Z 400MHz 2500MHz SXB4089Z OT-89 2500MHz | |
25c2625
Abstract: ECB-101161 267M3502104
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SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS121024 25c2625 ECB-101161 267M3502104 | |
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Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT |
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SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz the-9421 DS110720 | |
Transistor BC 457
Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
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SPA-1426Z SOF-26 SPA-1426Z SOF-26 SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3 Transistor BC 457 MCH185CN104KK TAJA105K020R | |
MCH185A100JK
Abstract: 1000PPM
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SPA1526Z SPA1526Z SOF-26 SOF-26 SPA1526ZSQ SPA1526ZSR MCH185A100JK 1000PPM | |
SPA-1426
Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
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SPA1426Z SPA1426Z SOF-26 SOF-26 Opt17] DS120601 SPA-1426 Transistor BC 457 MCH185A8R2JK MCH185A221JK | |
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Contextual Info: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor HBT MMIC housed in low-cost, surface-mountable |
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SXB4089Z 400MHz 2500MHz SXB4089Z OT-89 2500MHz | |
spa1526Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs |
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SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526 | |
Transistor BC 457
Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
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SPA-1526Z SOF-26 SPA-1526Z SOF-26 SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3 Transistor BC 457 bc 457 Transistor MCH185A101JK MCH185CN104KK TAJA105K020R MCH185A100JK | |
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Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs |
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SPA1426Z SOF-26 SPA1426Z enha9421 DS120601 SPA1426ZSQ | |