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    H2N5401

    Abstract: H2N5551 HE6203
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6203 H2N5401 H2N5401 H2N5551 183oC 217oC 260oC H2N5551 HE6203 PDF

    H2N5401

    Abstract: H2N5551 HE620
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2002.02.20 Page No. : 1/4 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6203 H2N5401 H2N5401 H2N5551 H2N5551 HE620 PDF