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    IC350

    Abstract: H2N6718L
    Contextual Info: HI-SINCERITY Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No. : 1/5 MICROELECTRONICS CORP. H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications.


    Original     		HE6218 H2N6718L H2N6718L 850mW 183oC 217oC 240oC 260oC IC350 PDF

    transistor mark code t1

    Abstract: H2N3904
    Contextual Info: HI-SINCERITY Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/5 MICROELECTRONICS CORP. H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92


    Original     		HE6218 H2N3904 H2N3904 183oC 217oC 260oC transistor mark code t1 PDF

    H2N3904

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2002.04.03 Page No. : 1/4 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings


    Original     		HE6218 H2N3904 H2N3904 PDF

    H2N6718L

    Abstract: Switching transistor 50115
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 1/4 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications.


    Original     		HE6218 H2N6718L H2N6718L 850mW Switching transistor 50115 PDF