HE6523 Search Results
HE6523 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HSC1815
Abstract: diode marking H2
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Original |
HE6523 HSC1815 HSC1815 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2 | |
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Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. |
Original |
HE6523 HSC1815 HSC1815 183oC 217oC 260oC | |
HSC1815Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. |
Original |
HE6523 HSC1815 HSC1815 |