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    TE Connectivity SBCHE68K2J

    RES 8.2K OHM 5% 7W AXIAL
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    TE Connectivity SBCHE6820RJ

    RES 820 OHM 5% 7W AXIAL
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    TE Connectivity SBCHE682RJ

    RES 82 OHM 5% 7W AXIAL
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    DigiKey SBCHE682RJ Bulk 214 1
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    TE Connectivity SBCHE68R2J

    RES 8.2 OHM 5% 7W AXIAL
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    DigiKey SBCHE68R2J Bulk 100 1
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    Omega Engineering PHE-6821

    PH ELECTRODE, FLAT SURFACE, RETR
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    Avnet Americas PHE-6821 Bulk 1
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    HE68 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HMBTA13

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2002.12.27 Page No. : 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures


    Original     		HE6842 HMBTA13 OT-23 HMBTA13 PDF

    SOT23 MARKING

    Abstract: HMBTA14 HMBTA64
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		HE6807 HMBTA64 HMBTA64 500mA. OT-23 HMBTA14 SOT23 MARKING HMBTA14 PDF

    HMBT4403

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2004.08.30 Page No. : 1/5 MICROELECTRONICS CORP. HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6818 HMBT4403 HMBT4403 OT-23 183oC 217oC 260oC PDF

    HBC848

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		HE6843 HBC848 HBC848 OT-23 Diss60 183oC 217oC 260oC 10sec PDF

    HMBT6520

    Abstract: HMBT6517
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6836 HMBT6517 HMBT6517 OT-23 HMBT6520 183oC 217oC 260oC HMBT6520 PDF

    marking code SN sot23

    Abstract: DIODE marking code PB PB40 BAT54 BAT54A BAT54C BAT54S HBAT54 HBAT54A HBAT54C
    Text: HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2008.07.15 Page No. : 1/5 MICROELECTRONICS CORP. HBAT54 Series Description SOT-23 Silicon Schottky Barrier Double Diodes • HBAT54: Single Diode, also available as double diodes. • HBAT54A: Common Anode.


    Original     		HE6854 HBAT54 OT-23 HBAT54: HBAT54A: HBAT54C: HBAT54S: HBAT54 HBAT54A HBAT54C marking code SN sot23 DIODE marking code PB PB40 BAT54 BAT54A BAT54C BAT54S HBAT54A HBAT54C PDF

    D9D TRANSISTOR

    Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d
    Text: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA


    Original     		HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 183oC 217oC 260oC D9D TRANSISTOR SOT-23 marking D9D transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d PDF

    HE6851

    Abstract: HBC858
    Text: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		HE6851 HBC858 HBC858 OT-23 183oC 217oC 260oC HE6851 PDF

    HMBTA14

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6841 HMBTA14 OT-23 183oC 217oC 260oC HMBTA14 PDF

    HMBTA13

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6842 HMBTA13 OT-23 183oC 217oC 260oC HMBTA13 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6856 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA56 PNP SILICON TRANSISTOR Description Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C


    Original     		HE6856 HMBTA56 OT-23 183oC 217oC 260oC PDF

    HMBT2222A

    Abstract: IC380
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2004.09.16 Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.


    Original     		HE6822 HMBT2222A HMBT2222A OT-23 200oC 183oC 217oC 260oC 245oC IC380 PDF

    HBC807

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		HE6830 HBC807 HBC807 OT-23 200oC 183oC 217oC 260oC 245oC PDF

    HMBT8599

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6811 Issued Date : 1997.12.31 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8599 PNP EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE6811 HMBT8599 OT-23 HMBT8599 PDF

    HMBT5088

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6824 Issued Date : 1993.08.27 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5088 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5088 is designed for low noise, high gain, general purpose amplifier applications.


    Original     		HE6824 HMBT5088 HMBT5088 OT-23 PDF

    HMBT5551

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages.


    Original     		HE6838 HMBT5551 HMBT5551 OT-23 PDF

    transistor a4y

    Abstract: A4Y SOT23 HMBT1015
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		HE6804 HMBT1015 HMBT1015 OT-23 transistor a4y A4Y SOT23 PDF

    HBC817

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		HE6831 HBC817 HBC817 OT-23 PDF

    HMBT4124

    Abstract: ROC SOT 23
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6859 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT4124 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4124 is designed for general purpose switching and amplifier applications.


    Original     		HE6859 HMBT4124 HMBT4124 OT-23 ROC SOT 23 PDF

    HMBT5087

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6850 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5087 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5087 is designed for low noise, high gain, general purpose amplifier applications.


    Original     		HE6850 HMBT5087 HMBT5087 OT-23 PDF

    IC380

    Abstract: HMBT2222A HIGH SPEED SWITCHING NPN SOT23
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.


    Original     		HE6822 HMBT2222A HMBT2222A OT-23 IC380 HIGH SPEED SWITCHING NPN SOT23 PDF

    HMBT5086

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5086 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5086 is designed for low noise , high gain , general purpose amplifier applications.


    Original     		HE6849 HMBT5086 HMBT5086 OT-23 PDF

    HMBT2222A

    Abstract: HMBT2907A
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6821 Issued Date : 1993.06.23 Revised Date : 2002.10.25 Page No. : 1/3 HMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT2907A is designed for general purpose amplifier and high -speed switching, medium power switching applications.


    Original     		HE6821 HMBT2907A HMBT2907A OT-23 HMBT2222A HMBT2222A PDF

    HLB122J

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in


    Original     		HE6830 HLB122J HLB122J O-252 PDF