HEMT AMPLIFIER Search Results
HEMT AMPLIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TA75W01FU |
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Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 |
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| TC75S55F |
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Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353 |
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| TC75S54F |
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Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 |
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| TC75S51F |
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Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 |
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| TC75S102F |
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
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HEMT AMPLIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CFH120
Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
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CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 CFH120 CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P | |
MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
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CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10 | |
GS 9521
Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
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CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K | |
5703 infineon
Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
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CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 5703 infineon pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm | |
pseudomorphic HEMT
Abstract: CFH120-08 HEMT marking P
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CFH120-08 Q62705-K0603 pseudomorphic HEMT CFH120-08 HEMT marking P | |
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Contextual Info: S IE M E N S CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • |
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CFY66 CFY67) CFY66-08 QS9000 | |
low noise hemt
Abstract: 35 micro-X Package MARKING CODE Q igp 0830 CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P
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CFY66 CFY67) CFY66-08 CFY66-0assemblies. QS9000 low noise hemt 35 micro-X Package MARKING CODE Q igp 0830 CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P | |
HEMT marking PContextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • |
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CFY66 CFY67) CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY66-nnl QS9000 HEMT marking P | |
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Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency |
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Contextual Info: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz |
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CFY66 CFY67) CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY66-nnl: QS9000 | |
EGN26C030MKContextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
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60GHz EGN26C030MK -j100 EGN26C030MK | |
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Contextual Info: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN35C030MK | |
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Contextual Info: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN21C030MK 14GHz | |
EGN35C030MK
Abstract: JESD22-A114 1581-4 2S110
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EGN35C030MK EGN35C030MK JESD22-A114 1581-4 2S110 | |
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Contextual Info: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
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14GHz EGN21C020MK -j100 | |
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Contextual Info: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
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14GHz EGN21C030MK -j100 | |
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Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
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60GHz EGN26C020MK -j100 | |
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Contextual Info: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 16.5dB(typ.) @ f=3.50GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN35C030MK 50GHz | |
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Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN26C020MK 60GHz | |
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Contextual Info: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications |
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CGHV27030S CGHV27030S CGHV27 | |
EGN26C030MK
Abstract: 60Ghz JESD22-A114
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EGN26C030MK 60GHz EGN26C030MK 60Ghz JESD22-A114 | |
egn21c020mk
Abstract: MTTF JESD22-A114 EGN21
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EGN21C020MK 14GHz egn21c020mk MTTF JESD22-A114 EGN21 | |
GaN hemtContextual Info: Mitsubishi Semiconductors < GaN HEMT > MGF0840G 10 W GaN HEMT [ non-matched ] DESCRIPTION The MGF0840G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. OUTLINE DRAWING Unit : m illim eters FEATURES • High voltage operation : VDS = 47 V |
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MGF0840G MGF0840G, GaN hemt | |
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Contextual Info: Mitsubishi Semiconductors < GaN HEMT > MGF0843G 20 W GaN HEMT [ non-matched ] DESCRIPTION The MGF0843G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. OUTLINE DRAWING Unit : m illim eters FEATURES • High voltage operation : VDS = 47 V |
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MGF0843G MGF0843G, | |