HEMT MARKING BA Search Results
HEMT MARKING BA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CLF1G0035-200P |
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CLF1G0035-200 - 200W Broadband RF power GaN HEMT |
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CLF1G0035-100P |
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CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
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CLF1G0060-30 |
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CLF1G0060-30 - 30W Broadband RF power GaN HEMT |
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CLF1G0035-100 |
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CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
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CLF1G0035-50 |
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CLF1G0035-50 - Broadband RF power GaN HEMT |
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HEMT MARKING BA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ATF501P8
Abstract: ATF-501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229
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ATF-501P8 5988-9767EN ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 | |
ATF-501P8
Abstract: 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram
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ATF-501P8 5988-9767EN 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram | |
Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
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MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3 | |
Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 |
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MGF4941CL MGF4941CL AEC-Q101 4000pcs | |
RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
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MGF4941CL MGF4941CL AEC-Q101 4000pcs RO4350B ROGERS transistor "micro-x" "marking" 3 RO4350B max current GD-32 low noise Micro-X marking "K" RO4350B | |
Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel | |
Contextual Info: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. |
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MGF4953A MGF4953A 12GHz 000pcs/reel | |
Contextual Info: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing |
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MGF4953B MGF4953B 20GHz 000pcs/reel MGF4953B-01) MGF4953B-70al | |
MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
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MGF4963BL MGF4963BL 20GHz 4000pcs HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B | |
MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
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MGF4964BL MGF4964BL 20GHz 4000pcs MGF4964 Micro-X marking "K" transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496 | |
MGF4931AM
Abstract: MGF4931 77153
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MGF4931AM MGF4931AM 12GHz 15000pcs/reel MGF4931 77153 | |
HEMT marking K
Abstract: MGF4953A
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MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K | |
Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) |
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MGF4963BL MGF4963BL 20GHz 4000pcs | |
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.) |
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MGF4964BL MGF4964BL 20GHz 4000pcs | |
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Contextual Info: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4931AM MGF4931AM 12GHz 15000pcs/reel | |
Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4936AM MGF4936AM 12GHz MGF4936AM-75 15000pcs/reel | |
Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4936AM MGF4936AM 12GHz MGF4936AM-75 15000pcs/reel | |
MGF4934
Abstract: mgf4934cm MGF4934CM-75 130/KU 601
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MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel MGF4934 130/KU 601 | |
MGF4953B
Abstract: MGF4953B-70
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MGF4953B MGF4953B 20GHz 000pcs/reel 000pcs/reel MGF4953B-01) MGF4953B-70) MGF4953B-70 | |
MGF4921AM
Abstract: 5442
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MGF4921AM MGF4921AM 15ric 5442 | |
Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4965BM MGF4965BM 20GHz 15000pcs/reel | |
Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4965BM MGF4965BM 20GHz 15000pcs/reel | |
MGF4921AMContextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4921AM MGF4921AM | |
Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost |
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MGF4921AM MGF4921AM |