HER 305 DIODE Search Results

HER301

Abstract: HER308
Contextual Info: HER301 - HER308 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

HER301

Abstract: HER308 HER306-HER308
Contextual Info: HER301 - HER308 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER301 - HER308 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

HER301

Abstract: HER308
Contextual Info: HER301 - HER308 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: TH97/2478 www.eicsemi.com HER301 - HER308 IATF 0113686 SGS TH07/1033 TH09/2479 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO - 201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability

her305

Abstract: HER301 HER301M HER305M VR50
Contextual Info: MOSPEC HER301 Thru HER305 Switchmode Power Rectifiers ULTRAFAST RECTIFIERS Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 3.0 AMPERES 50-400 VOLTS ＊High Surge Capacity

her3013

Abstract: ER301 HER301 HER304 HER305
Contextual Info: Sk MOSPEC HER301 thru HER305 Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * * * 3.0 AMPERES

HER 303 diode

Abstract: DIODE HER306 Diode HER 303 HER 300 diode APPLICATION DIODE HER306 diode HER308 VRRM 800, IFSM 300 DO-201AD HER306 HER308
Contextual Info: HER301 – HER308 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic

Contextual Info: HER301 – HER308 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic

Contextual Info: HER301 – HER308 3.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

HER308

Abstract: A-405 HER301
Contextual Info: LESHAN RADIO COMPANY, LTD. HER301 thru HER308 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 50 to 1000V Forward Current 3.0A Flammability Classification 94V-0 * High temperature metallurgically bonded construction

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER301 - HER308 HIGH EFFICIENT

IPL10050CW

Abstract: DIODO LASER IPL10530DAW Integrated Photomatrix IPL10040DW 22 DIODO IPL10020 IPL10530CAL IPL10040DHC IPL10070
Contextual Info: | PLv£v Ten Thousand Series Photodetector Range K eneral Description Shortform Catalogue IPL designs and manufactures a wide range of siJicon photodeteciors both standard and custom design. Used in a wide range of Implications from low cost commercial to military and aerospace,

mmic

Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Contextual Info: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)

DO-201AD

Contextual Info: Formosa MS Axial Leaded High Effciency Rectifiers HER501G THRU HER508G List List. 1 Package outline. 2

Contextual Info: Formosa MS Silicon Rectifier HER501 THRU HER508 List List. 1 Package outline. 2 Features. 2

HER506G

Contextual Info: Formosa MS Glass Passivated Rectifier HER501G THRU HER508G List List. 1 Package outline. 2

Contextual Info: Formosa MS Axial Leaded High Effciency Rectifiers HER501 THRU HER508 List List. 1 Package outline. 2

Contextual Info: Formosa MS Axial Leaded High Effciency Rectifiers HER501G THRU HER508G List List. 1 Package outline. 2

information applikation

Abstract: Mikroelektronik Information Applikation B305D B304D eft 317 transistor information applikation mikroelektronik B303D Kombinat VEB A 301 A301D "information applikation"
Contextual Info: LnnJÖD=^Jj i ^ j s l E k t j P D n i k Information Applikation B 303 D B 304 D B 305 D B 306 D m ölkr^elel-ctsnariik Information Applikation Heft: 23 INITIATOREN-IS B303D- B 304D B 305D *B 306D VEB. Halbleiterwerk FrankfurtïOder im VEB Kom binat Mikroelektronik,

74F series logic family

Abstract: F245 F640 F645
Contextual Info: g" National Semiconductor May 1990 54F/74F2640 • 54F/74F2643 • 54F/74F2645 Octal Bus Transceiver with 2 5 il Series Resistors in the Outputs General Description Features These devices are octal bus transceivers designed for asyn­ chronous two-way data flow between the A and B busses.

HEP 580

Abstract: hep 154 smd marking IGE Hep 590 SMD MARKING CODE 813 10 HFK TV30C5V0-G TV30C5V0J TV30C5V0K marking HHR
Contextual Info: SMD Transient Voltage Suppressor COAICHII» SMO D io d e s S poclallst TV30C5V0-G Thru TV30C171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 3000 Watts RoHS Device Features Id e al for s u rfa ce m ount a pp lica tio n s SMC/DO-214AB E a s y pick and place

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

B150A

Abstract: B250D B500D spice model PNP UHF B1000A B250A pnp 8 transistor array ttl B500A
Contextual Info: Analog ASICs Introduction TEMIC has been developing customer specific integrated circuits for more than 20 years. In the field of analog ASICs, numerous ASIC developments covering communication, data processing, measurement, household, consumer, industrial, military and space, and automotive have created an extensive know-how. These