HERMETIC Search Results

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

T41G

Contextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

2n243

Abstract: 2N244 transistor all
Contextual Info: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.

Contextual Info: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

1N5614 JANTX

Contextual Info: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: OSHÏBA LA S E R /FB R O P TIC Gl D • T7 2SE D ü lbD ññ S «TO SL - T -4 T -Q 7 TOSHIBA LASER DIODE TOLD 360 Features • • • • • Wavelength 1.55/im Coaxial Package (Hermetically Sealed) Suitable for High Bit Rate Modulation Single-mode Fiber Pigtail

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

tim8996-30

Abstract: 7-AA03A
Contextual Info: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz „ HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: Part Number 856695 140 MHz SAW Filter Data Sheet Features • • • • • • • • • For multiple applications Usable bandwidth 10 MHz Low loss High attenuation Balanced operation Ceramic Surface Mount Package SMP Hermetic RoHS compliant (2002/95/EC), Pb-free Pb

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

zener diode c12

Abstract: ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener
Contextual Info: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And

CSP-1713

Abstract: CSP marking code
Contextual Info: Part Number 885007 2436 MHz BAW Filter Data Sheet Features BAW filter for WiMAX/WLAN/ISM applications Usable bandwidth 72 MHz Low loss Single-ended operation Ceramic chip-scale Package CSP Small Size Hermetic RoHS compliant (2002/95/EC), Pb-free Pb Package

TOSHIBA HEMT

Abstract: TGI7785-120L
Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION