HEXFET Search Results

IRFB4510

Abstract: IRFB4510G 0.192mH IRFB4310GPBF IRFB4510GPBF IRFB4310
Contextual Info: PD - 97774 IRFB4510GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

D47F

Abstract: IRFH8311 PQFN footprint d020d
Contextual Info: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

IRF3205 application

Abstract: irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
Contextual Info: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature

Contextual Info: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits

AUIRF7303Q

Abstract: auirf7303
Contextual Info: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*

AUIRLS4030-7P

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

KRF7805Z

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

100V Single P-Channel HEXFET MOSFET

Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

uf3205

Abstract: 304 MOSFET UF3205L uf3205l-ta3-t
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

IRFH5250

Abstract: IRFH5250TRPBF
Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

IRFB4510

Abstract: IRFB4510PBF
Contextual Info: PD - 97772 IRFB4510PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

marking code H1a

Abstract: AUIRLR3105TR AUIRLR3105 12-00-16c
Contextual Info: PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed

dc brushed motor 60v

Contextual Info: PD - 97787 StrongIRFET™ IRFH7004PbF HEXFET Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

smd diode 77a

Abstract: p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit

337 SMD

Abstract: KRF7703 mosfet 337
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7703 TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.2mm 1,5,8: Drain Available in Tape & Reel 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter

78 DIODE SMD

Abstract: KRF7504
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ -4.5V @ TA = 25

P channel MOSFET 50A

Abstract: KRF7105
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

p channel mosfet 100v

Abstract: 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 100 -100 V ID 2.1 -1.5 Continuous Drain Current Ta = 70

smd diode 74a

Abstract: smd 1a 24v diode 78 DIODE SMD KRF7389 58A1 49-A1
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7389 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 30 -30 V ID 7.3

smd diode br

Abstract: diode 66a KRF7501
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

smd diode 74a

Abstract: BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage

51A SOIC

Abstract: KRF7663
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS -20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 25