HEXFET 40A 600V Search Results

irfps40n60k

Abstract: IRFPS
Contextual Info: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

IRFPS37N50A

Abstract: IRFPS40N60K
Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

IRFPS37N50A

Abstract: IRFPS40N60K IR 224A
Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

HFA210NJ60C

Abstract: IRFP250 93080
Contextual Info: PD -2.448 rev. B 02/99 HFA210NJ60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 600V V F typ. ƒ = 1.2V

Contextual Info: INTERNATIONAL RECTIFIER 4ÖSS4S5 GQ1G151 3 • SbE D International Rectifier Rectifiers Fast Recovery T - ô 3-¿2.3 _ Snubber and Free Wheeling Diodes >F AV <@ Tc Part Number Vr r m R18CF25AA R18SF25AA R23DF25AA R23AF25AA R34BF45 R52KF45 2500 2500 2500 2500

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )

IRFP250

Contextual Info: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

CD 1517

Abstract: IRFIBC20G BY I.R 600V IRFIBC20G
Contextual Info: PD-9.850 International S Rectifier IRFIBC20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss - 600V ^DS on - 4 -4 ^ lD = 1.7A

40mt120uhta

Abstract: ir igbt 1200V 40A 001214 Fast Recovery Bridge Rectifier, 60A, 600V 40MT120UHA igbt 40A 600V TF010
Contextual Info: Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

40EPF06

Abstract: 09 0098 00 05 40EPF06 spice 40EPF P035H 40EPF06PBF P035
Contextual Info: Bulletin I2171 10/04 QUIETIR Series 40EPF06PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 10A t rr = 60ns VRRM = 600V Description/ Features The 40EPF06PbF fast soft recovery QUIETIR rectifier series has been optimized for combined

555 triangular wave

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

transistor 20a

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

A 3150 igbt driver

Contextual Info: Bulletin I27281 11/06 GB25XF120K IGBT SIXPACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF VCES = 1200V • 10 s Short Circuit Capability • Square RBSOA IC = 25A @ TC=80°C • HEXFRED Antiparallel Diode with Ultrasoft

Super-247 IRFPS40N60KPBF

Abstract: IRFPS40N60K 37N50A
Contextual Info: SMPS MOSFET PD - 95702 IRFPS40N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple

37n50a

Abstract: Super-247 IRFPS40N60KPBF
Contextual Info: SMPS MOSFET PD - 95702 IRFPS40N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple

TRANSISTOR BIPOLAR 400V 20A

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

80EPF

Abstract: 80EPF06PbF
Contextual Info: Bulletin I2177 rev A 07/06 QUIETIR Series 80EPF.PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.1V @ 40A t rr = 70ns VRRM = 200 to 600V Description/ Features The 80EPF.PbF fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse

ic sc 6200

Contextual Info: Bulletin I27276 11/06 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 25A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: SMPS MOSFET PD - 95702 IRFPS40N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple

AN-994

Abstract: IRFBC20 IRFBC20L IRFBC20S 90139
Contextual Info: PD - 9.1014 IRFBC20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC20S Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D