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    HEXFRED DIODE Search Results

    HEXFRED DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    HEXFRED DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HFA16TB60

    Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
    Contextual Info: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)


    OCR Scan
    AN-993 HFA16TB60 HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219 PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


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    PDF

    GB05XP120KTPBF

    Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    GB05XP120KTPbF E78996 2002/95/EC 18-Jul-08 GB05XP120KTPBF PDF

    HF30D120ACE

    Abstract: IRGC15B120KB
    Contextual Info: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    3875A HF30D120ACE 125mm IRGC15B120KB HF30D120ACE IRGC15B120KB PDF

    Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •


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    4330A HF10D120ACE 150mm IRGB5B120K PDF

    DIODE 0536

    Abstract: HEXFRED DIODE GB05XP120KTPBF NC301
    Contextual Info: GB05XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    GB05XP120KTPbF E78996 2002/95/EC 18-Jul-08 DIODE 0536 HEXFRED DIODE GB05XP120KTPBF NC301 PDF

    Contextual Info: VS-GB05XP120KTPbF www.vishay.com Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    VS-GB05XP120KTPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    hexfred gen3

    Abstract: typical diode gen3 HF20D120ACE CR diode transient
    Contextual Info: PD - 94331A HF20D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V I F nom =8A VF(typ)= 1.85V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    4331A HF20D120ACE 125mm IRGB8B120K hexfred gen3 typical diode gen3 HF20D120ACE CR diode transient PDF

    GB05XP120KTPBF

    Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    GB05XP120KTPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GB05XP120KTPBF PDF

    GB15XP120KTPBF

    Abstract: GB11
    Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    GB15XP120KTPbF E78996 2002/95/EC 11-Mar-11 GB15XP120KTPBF GB11 PDF

    GB15XP120KTPBF

    Abstract: gb15xp120kt HEXFRED DIODE
    Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


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    GB15XP120KTPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GB15XP120KTPBF gb15xp120kt HEXFRED DIODE PDF

    GB15XP120KTPBF

    Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB15XP120KTPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GB15XP120KTPBF PDF

    GB05XP120KTPBF

    Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB05XP120KTPbF E78996 2002/95/EC 11-Mar-11 GB05XP120KTPBF PDF

    hexfred gen3

    Abstract: HF30D120ACE IRGC15B120KB 1200v diode
    Contextual Info: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    3875A HF30D120ACE 125mm 12-Mar-07 hexfred gen3 HF30D120ACE IRGC15B120KB 1200v diode PDF

    GB05XP120KTPBF

    Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB05XP120KTPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GB05XP120KTPBF PDF

    HF50D120ACE

    Abstract: IRGC50B120KB
    Contextual Info: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •


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    HF50D120ACE 125mm IRGC50B120KB HF50D120ACE IRGC50B120KB PDF

    HF50D120ACE

    Abstract: IRGC50B120KB
    Contextual Info: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •


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    HF50D120ACE 125mm 12-Mar-07 HF50D120ACE IRGC50B120KB PDF

    HF10D120ACE

    Contextual Info: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •


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    HF10D120ACE 125mm IRGB5B120K HF10D120ACE PDF

    GB05XP120KTPBF

    Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB05XP120KTPbF E78996 2002/95/EC 11-Mar-11 GB05XP120KTPBF PDF

    GB15XP120KTPBF

    Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB15XP120KTPbF E78996 2002/95/EC 11-Mar-11 GB15XP120KTPBF PDF

    VS-GB15XP120KTPBF

    Contextual Info: VS-GB15XP120KTPbF www.vishay.com Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    VS-GB15XP120KTPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB15XP120KTPBF PDF

    gb15xp120kt

    Abstract: GB15XP120KTPBF 93913
    Contextual Info: GB15XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original
    GB15XP120KTPbF E78996 2002/95/EC 18-Jul-08 gb15xp120kt GB15XP120KTPBF 93913 PDF

    HF10D120ACE

    Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •


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    4330A HF10D120ACE 150mm 12-Mar-07 HF10D120ACE PDF

    IRGPS40B120U

    Abstract: HF70E120ACE
    Contextual Info: PD - 94715 HF70E120ACE Hexfred Die in Wafer Form Features 1200V IF nom = 75A VF(typ)= 2.3V @ IF(nom) @ 25°C Power Supply Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • Benchmark Efficiency for UPS and Welding


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    HF70E120ACE 125mm 12-Mar-07 IRGPS40B120U HF70E120ACE PDF