HF JFET Search Results

asics

Abstract: AN646 APP646 OC48 asic chips
Contextual Info: Maxim > App Notes > ASICs Keywords: ASICs, QuickChip, RF, semicustom, custom, HF, asic, RF ASICs, quick chip, semi-custom, fullcustom Mar 13, 2000 APPLICATION NOTE 646 Semicustom QuickChip ASICs Implement RF Functions to 9GHz Abstract: Maxim has two different approaches for developing HF ASICs: a semi-custom QuickChip design

2SK715

Contextual Info: Ordering number : EN2543A 2SK715 N-Channel JFET http://onsemi.com 15V, 5 to 24mA, 50mS, SPA Applications • • AM tuner RF amp, low-noise amp HF low-noise amp Features • • • • Adoption of FBET process Large ⏐yfs⏐ Small Ciss Very low noise figure

Contextual Info: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS

apt449a

Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
Contextual Info: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications

tl071 tl081

Abstract: LF451
Contextual Info: LF451 m,JFETA* - 241 - 0 X / U - 1 - - ¡-.m /u s • À ^ ' M T X iift:5 0 p A 0ÁMMME: 25nV /vr Hz •te fi 'y Y • '/ - X m m. m a fâ AAiTfcMKE t u s A ÍJ^ff n s iiA ^ œ » ff a * hf « m ife E # m Vos TC/Vos Vos/time Ib JöjMTT&ffiL I os K n v ï^ w .

lnvm

Abstract: LF442 LF442A
Contextual Info: 239 - LF442/A 2 » National Semiconductor U — ;\°y— ,JFETA^J V s-±2Ü V T * H ö f t : üOpAmax i l i 7 -t 7 LF442A Ä W ¡8 14 M /infl // Amov • A « t t JE Ta=25°C » A ^ m E : 3 5 n V /\T Hz HF s « 3 f e -fe t V Y • V —X m. tR ß m is TI :TL062A

MC34084A

Abstract: MC34084
Contextual Info: - 216 - M C34084 « , MM, J i v f M , MOTOROLA JFETA * •m 0 X V I / — U — f : 2 5 V /// V • G B W :8 M z # T H D :0 . 01% • m w # —x A ^ H T f l tS S mm, TOP VIEW «¿a a ii m e m x ij w ± ± Vs ± Vs V ± Vs ± Vs V 0—-+70 0—+70 °c HF

Contextual Info: T O SH IB A TA7 5062 P/S/F TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT T A 7 ^ n f i7 P • m m m m t ^mf ^ ■ TA 7Rflfi7<; g ■ * » m mf ^ f ^ f ^ av SILICON M ONOLITHIC g T A 7 R flfi7 F mm m« k# 'HF ^ ■ DUAL OPERATIONAL AMPLIFIER The TA75062P, TA75062S and TA75062F are J-FET input

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

smd TRANSISTOR code marking w2t

Abstract: MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T
Contextual Info: N Table of Contents QML Certification .1 National’s Space-Level Product Families .1

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

CXA1417

Abstract: CXA1417S
Contextual Info: SONY CXA 1 9 1 7 AM/AS □ □ Dolby* S type Noise Reduction Processo Description The CXA1917AM/AS is a bipolar IC designed for use in the Dolby S type noise reduction system NR . An external operational amplifier is required to configure the decoder. The stereo Dolby B-C-S type

CXA1417S

Abstract: cxa1417 Dolby S CXA1917AM CXA1917AS CXA1917AM-AS sony c48 Dolby S type Noise Reduction Processor
Contextual Info: CXA1917AM/AS Dolby∗ S type Noise Reduction Processor Description The CXA1917AM/AS is a bipolar IC designed for use in the Dolby S type noise reduction system NR . An external operational amplifier is required to configure the decoder. The stereo Dolby B-C-S type

CXA1417S

Abstract: Dolby S type Noise Reduction Processor cxa1417 Dolby S sony c48 CXA1917AM CXA1917AS SDIP-30P-01 mc3dt CXA1562
Contextual Info: CXA1917AM/AS Dolby∗ S type Noise Reduction Processor Description The CXA1917AM/AS is a bipolar IC designed for use in the Dolby S type noise reduction system NR . An external operational amplifier is required to configure the decoder. The stereo Dolby B-C-S type

TL066

Abstract: TL066BC TL066AC TL066C 2070-P
Contextual Info: 295 7 ° n ? "7 TL066 TEXAS INSTRUMENTS JFETA* T L 066C TL066A C TLQ66BC m ±18 V ± 15 ±15 V ± 30 ± 30 V P :-20—+85. PS:-20—+70 P:-20—+85, PS:-20— +70 P :-20—+85, PS:-20^—+70 °c P :680, PS:448 P:680, PS:446 P:680, PS:446 rnW V s=±15V l i S l Œ

Contextual Info: r n l A /i i / 1 WUIOOIC N-Channel JFET General Purpose Amplifier CORPORATION J201 - J204/SST201 - SST204 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage . -40V

Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V

Contextual Info: N-Channel JFET Monolithic Dual caioQic CORPORATION U443/U444 FEATU RES DESCRIPTION • H igh Gain . gts > 6 m S typical • Low Leakage .Ig < 1pA typical • Low Noise

NIP1CHP

Contextual Info: NIP SERIES DIE N-Channel JFET The NIP Series offers the designer an alternative fortrue high performance analog switching applications. Good breakdown voltage characteristics coupled with low on-resistance and very fast switching make these devices suitable for a wide range of applications. Die

Contextual Info: SONY CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMiC. This !C is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation

BJT with i-v characteristics

Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
Contextual Info: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small

2n4392 SPECIFICATION

Abstract: 2N4856 SILICONIX 2N4391
Contextual Info: NCB SERIES DIE N-Channel JFETs CZ~Siliconix JmM in c o r p o r a te d The NCB Series features many of the superior NC B1C HP* N C B2C H P* NC B3C HP* NC B4C H P* 2N4391 2N4856 2N4856A 2N4859 2N4859A PN4391 J111 SST111 SST4391 2N4392 2N4857 2N4857A 2N4860 2N4860A

SMD Resistors, Arrays and Networks

Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: Portable Electronics AAP662 AAP662 ADVANCED DATA Electret Microphone ECM Pre-Amplifier w/Programmable Filter DESCRIPTION The AAP662 ECM Pre Amplifier is a low gain preamplifier aimed at offering a feature-rich alternative to a typical JFET preamp solution. The performance of