HFE 60 Search Results

KTC3875S

Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

KTA2014F

Contextual Info: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.

2SC4738FV

Abstract: MARKING LY toshiba 2SA1832FV
Contextual Info: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

2SA21

Abstract: 2SA2154 2SC6026
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026

KTA2014V

Abstract: KTC4075V
Contextual Info: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ・High hFE : hFE=70~700.

KTA1504S

Abstract: KTC3875S
Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).

smd marking ly

Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).

2sc4738ft

Abstract: 2SA1832FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2sc4738ft

Abstract: 2SA1832FT IC5010
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

ic 556

Abstract: BCW67 BCW67A BCW67B BCW67C BCW68
Contextual Info: CDIL BCW67C, 68H BCW67, A, B, C BCW68, F, G, H hFE min. 250 max. 630 min. min. min. 35 60 100 IC = 300 mA; V<;e = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE hFE hFE R A TIN G S at T a = 25°C unless otherwise specified Limiting values Collector-base voltage (open emitter)

smd transistor LY

Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

FHT945Y

Abstract: FHT945L
Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT945 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High 高 hFE：hFE=70～700 Low Noise低雜訊NF=1dB (Typ.),10dB(Max.)

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT1623 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High 高 hFE：hFE=90～600 Low Noise低噪聲NF=1dB (Typ.),10dB(Max.)

transistor KTC3198

Abstract: KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y
Contextual Info: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTA1266.

Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT1815 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特点 Excellent hFE Linearity hFE 线性特性极好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High高 hFE：hFE=70~700 Low Noise低噪声：NF=1dB (Typ.),10dB(Max.)

FHT3875

Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT3875 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 SOT-23 Excellent hFE Linearity hFE 線性特性極好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High高 hFE：hFE=70~700 Low Noise低雜訊：NF=1dB (Typ.),10dB(Max.)

HN1B26FS

Contextual Info: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1 6 2 5 3 4 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).

missile guidance ic

Abstract: 2SA2154 2SC6026
Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154

2SA2154MFV

Abstract: 2SC6026MFV 2SA21
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz).

small signal transistors

Contextual Info: A5T2192 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type A5T2192 Tj 150 hFE max 300 hfe 2.5 Industry Type A5T2192 Notes VCBO 60 hFE A