HFE-200 TRANSISTOR PNP Search Results

HFE-200 TRANSISTOR PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

HFE-200 TRANSISTOR PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
hn3a51f Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F -120V hn3a51f	PDF
HN4A06J Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V HN4A06J	PDF
Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).	Original	KTA1517S -120V. KTC3911S. -120V, -10mA,	PDF
HN4A06J Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V HN4A06J	PDF
Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V	PDF
Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)	Original	2SA1802 2SC4681	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SA1802 2SC4681 A1802 Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)	Original	2SA1802 2SC4681 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 2SC4681 A1802	PDF
Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)	Original	2SA1802 2SC4681	PDF
Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)	Original	2SA1802 2SC4681	PDF
Contextual Info: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)	Original	2SA1802 2SC4681	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
KTA1517 Abstract: KTC3911 2.T transistor planar Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.	OCR Scan	KTA1517 -120V. KTC3911. 270Hz KTA1517 KTC3911 2.T transistor planar	PDF
Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F	PDF

HN3A51F Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F -120V HN3A51F	PDF
Marking 34-Q1 Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V Marking 34-Q1	PDF
Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J	PDF
Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J	PDF
Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200 to 700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F	PDF
2SA1312 Abstract: 2SC3324 Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) · High hFE: hFE = 200~700	Original	2SA1312 2SC3324 2SA1312 2SC3324	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SA1049 Abstract: transistor 2SA1049 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. · High breakdown voltage: VCEO = −120 V · High hFE: hFE = 200~700 · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 transistor 2SA1049 2SC2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF

HFE-200 TRANSISTOR PNP Search Results

HFE-200 TRANSISTOR PNP Result Highlights (5)

HFE-200 TRANSISTOR PNP Datasheets Context Search

HN4A51J

hn3a51f

HN4A06J

HN4A06J

TOSHIBA Transistor Silicon PNP Epitaxial Type

HN4A51J

KTA1517

HN3A51F

Marking 34-Q1

2SA1312

2SA1049

2SA1049

2SA1049

2SA1049