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    Abstract: No abstract text available
    Text: BVDSS = 800 V RDS on typ = 1.55 Ω HFH7N80 ID = 7.0 A 800V N-Channel MOSFET TO-3P FEATURES  Originative New Design 1 2 3  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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