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    HFP2N60

    Abstract: No abstract text available
    Text: BVDSS = 600 V RDS on typ = 4.2 Ω HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFP2N60S O-220 54typ HFP2N60

    HFP2N60

    Abstract: No abstract text available
    Text: BVDSS = 600 V RDS on typ = 4.0 Ω HFP2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFP2N60 O-220 54typ HFP2N60

    mosfet 600V 20A

    Abstract: mosfet 20a 300v hfp2n60 N-Channel mosfet 600v 20A "N-Channel MOSFET" c25 mosfet Mosfet 600V, 20A mosfet 10a 600v mosfet 300V 10A transconductance mosfet
    Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ 1―G T j ——Operating Junction Temperature …………………………150℃


    Original     		PDF HFP2N60 O-220 Width300sDuty 600VVGS mosfet 600V 20A mosfet 20a 300v hfp2n60 N-Channel mosfet 600v 20A "N-Channel MOSFET" c25 mosfet Mosfet 600V, 20A mosfet 10a 600v mosfet 300V 10A transconductance mosfet