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    HFP2N

    Abstract: No abstract text available
    Text: BVDSS = 700 V RDS on typ = 5.0 Ω HFP2N70S ID = 1.6 A 700V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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    PDF HFP2N70S O-220F O-220 54typ HFP2N