HIAX Search Results

H21Y

Abstract: tdk zd
Contextual Info: Al ABRIDGED VERSION SSI 32R2110R/2111R ómmsvskms 24-Channel Thin Film Read/Write Devices A TDK G roup/C om pany Target Specification January 1995 DESCRIPTION FEATURES 5V ±10%, 12V ± 10% supply The SSI 32R2110R/2111R are BiCMOS monolithic integrated circuits designed for use with two-terminal

Contextual Info: 5TE T> m 0257527 D0312M0 b37 • AMD3 _ A]>V fllCRQ TELECOM -p-ir-n- ? Am7901 B/C Advanced Micro Devices Subscriber Line Audio-Processing Circuit (SLAC) WORLD-CHIP DISTINCTIVE CHARACTERISTICS ■ Combination CODEC and Fitter ■ No trimming or adjustments required

L493

Abstract: T9249
Contextual Info: r-l This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Sarntec Corp. who was the test sponsor. All equipment and measuring instruments used during testing were

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

RC12H philips

Abstract: philips 2322 704 92006 resistance rc32 RC12G RC12H resistor RC12H RC22H PHILIPS RC32 RESISTOR RC22H philips resistor RC02H 2322 724
Contextual Info: Philips Components Product specification Precision chip resistors sizes 1206, 0805, 0603 and 0402 RC02/12/22/32 1% FEATURES DESCRIPTION • Low assembly costs The resistors are constructed on a high grade ceramic body aluminium oxide . Internal metal electrodes are

Contextual Info: SLOTTED OPTICAL SWITCH 5 P ] ü E L f C i B 8i î C 5 CNY29 SYMBOL MiUJMETERS MIN. MAX. A 10.? 11.0 A, 3.0 3.2 Aj 3. 3 3.2 .600 .750 ÆONOMb, D 24.3 24.7 D. 11.0 12.0 Ob 3.0 3.3 e. 6.» 7.S 2.3 [J.i ef E .615 6.35 L 6.00 3.2 3.4 % Q 189 19.2 as 1.0 S 3.45 3.76

MAX527

Abstract: MAX526 MAX526ACWG MAX526AENG MAX526BCNG MAX526BCWG MAX526BENG 3BL sot DAC 10V output TL 7493
Contextual Info: MAXIM INTEGRATED PRODUCTS SIE D 19-4500; Rev. 1; 5/92 • 5fl7bbSl 0 D D b b M 3 y i/iy ix i / 1 3 Ü HIIXII m Calibrated Quad 12-Bit Voltage-Output D/ACeny&rters These devices feature double-buffered interface logic with a 12-bit input register and a 12-bit DAC register. Data in the DAC

xb93

Contextual Info: SINGLE-IN-LINE SOCKETS Low Profile Carriers Single and Double Row • Low profile receptacles sit .031” above board. • Series 714 uses M-M# 1401 & 1407 pin receptacles. See page 126 for details. • Hi-Rel 4-finger BeCu #30 contact is used in the 1401 receptacle and

Contextual Info: FLEX 6000 Programmable Logic Device Family July 199a, v«r. 3.03 Features. D atasheet ^ ^ Provides an ideal low-cost, programmable alternative to highvolume gate array applications and allows fast design changes during prototyping or design testing Product features

AM25LS2521

Abstract: ad 440J B7AB IOCM3
Contextual Info: Am25LS2521 Am25LS2521 Eight-Bit Equal-to Comparator DISTINCTIVE CHARACTERISTICS 8-bit byte oriented _equal comparator Cascadable using Ein High-speed, Low-Power Schottky technology tpc A • B to EouT in 9ns Standard 20-pin package GENERAL DESCRIPTION The Am25LS2521 is an 8-bit "equal to " comparator

Contextual Info: FLEX 6000 Programmable Logic Device Family September 198B, ver. 3.04 Features. Data Sheet ^ ^ Provides an ideal low-cost, programmable alternative to highvolume gate array applications and allows fast design changes during prototyping or design testing

Contextual Info: m U ICM7226A ICM7226B H LA 1R R I3 U S E M I C O N D U C T O R 8-Digit Multi-Function Frequency Counter/Timers D ecem ber 1993 Description Features • CMOS Design for Very Low Power • Output Drivers Directly Drive Both Segments of Large 8 Digit LED Displays

82437fx

Abstract: 82437
Contextual Info: PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Perform ance Read — 80/120 ns M ax Access Tim e 40 ns Max. Output Enable Time ■ Low Power Consumption — 20 m A Typical Read Current ■ x8-O nly Input/O utput Architecture — Space-Constrained 8-bit

cil pnp smd

Abstract: smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S
Contextual Info: Power Transistor n PNP t #jf+j:&m OUTLINE DIMENSIONS Case 1 E-pack 2SAl795 I-,_ 1:; : i ; -1 “5y;.5. o ] 4 -4OV -5A I’ll1 st> le 1 : J-he 2 : 3 : blmlttc~r 4 : colltTtol ;@i!Z RATINGS Q$Az$j$ 4 Absolute Maximum Ratings rl =1 CiL rj11 < ;,a fC$ I+ iii-

76639p

Abstract: HUF76639P
Contextual Info: HUF76639P3, HUF76639S3S in t e la i I O a t iì S h e e t N o v e m b e r 1999 F ile N u m b e r 4 6 9 4 .3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance ' rDS ON = 0.02612, VGs = 10V