HIGH FREQUENCY BJT Search Results

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

FPD6836P70

Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD200P70

Abstract: TL11 TL22 l420 FPD200P70SR
Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

FPD200P70

Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

fpd200p70

Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

Contextual Info: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate

L6699

Abstract: L4984 smps resonant llc full bridge L6699DTR LLC resonant full bridge schematic application l6562 a comparison of half bridge resonant converter resonant half bridge
Contextual Info: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate

L6699

Abstract: L4984 L6699D LLC resonant full bridge schematic half bridge smps resonant full bridge schematic resonance half bridge converter half bridge smps controller L6562 Application Note L6699DTR
Contextual Info: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate

TCP202 10x

Abstract: TDS700 P6243 11A32 TCP0030 TCPA400 TCPA300 Tektronix A622 Tektronix* A622 probe TCP404XL
Contextual Info: 115-2012:QuarkCatalogTempNew 8/13/12 5:11 PM Page 115 1 Active and Current Probes TEST & MEASUREMENT Active Probes Accurate High-Frequency Measurements with Reduced Probe Loading For testing high-impedance, high-frequency circuit elements which demand minimal loading, our portfolio of active voltage probes provides the proper signal bandwidth

ECU-V1H470JCG

Contextual Info: RF RF2431 HIGH FREQUENCY LNA/MIXER MICRO-DEVICES Typical Applications • UHF Digital and Analog Receivers Commercial and Consumer Systems • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems General Purpose Frequency Conversion

ECUV1H102JCX

Abstract: ATC HL_12 0805CS-030XMBC nfb50 ecu connectors RF2431PCBA RF2431 SOIC-16 ECUV1H470JCG MIXER SCHEMATIC DIAGRAM
Contextual Info: RF RF2431 MICRO-DEVICES HIGH FREQUENCY LNA/MIXER Typical Applications • UHF Digital and Analog Receivers Commercial and Consumer Systems • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems General Purpose Frequency Conversion

HV82

Contextual Info: HV825 High Voltage EL Lamp Driver IC Features General Description Processed with HVCMOS technology 1.0 to 1.6V operating supply voltage DC to AC conversion Output load of typically up to 6.0nF Adjustable output lamp frequency Adjustable converter frequency

Contextual Info: RF2051 RF2051 HIGH PERFORMANCE WIDEBAND RF PLL/VCO WITH INTEGRATED RF MIXERS Package: QFN, 32-Pin, 5mmx5mm   VCO 30MHz to 2.5GHz Frequency Range Fractional-N Synthesizer Synth Very Fine Frequency Resolution 1.5Hz for 26MHz Reference Mux Frac-N sequence

11-pin pager board

Abstract: C4722 motorola semiconductor RF CATALOG MC2800 MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1 SM5166AV
Contextual Info: Freescale Semiconductor, Order Inc.this document by MC2800SYNEVK/D MC2800SYNEVK Advance Information FLEX  Paging RF/IF Frequency This document contains the information of a frequency synthesized receiver prototype for FLEX roaming paging platform. This FLEX paging receiver board is a high

Contextual Info: RF2052 HIGH PERFORMANCE WIDEBAND RF PLL/VCO WITH INTEGRATED RF MIXER Package: QFN, 32-Pin, 5mmx5mm Features   VCO 30MHz to 2.5GHz Frequency Range Fractional-N Synthesizer Synth Very Fine Frequency Resolution 1.5Hz for 26MHz Reference Frac-N sequence

C4722

Abstract: CFWC450F BLM11B750S MC2800 MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1 SM5166AV
Contextual Info: Order this document by MC2800SYNEVK/D MC2800SYNEVK Advance Information  Paging RF/IF Frequency FLEX Synthesizer Receiver This document contains the information of a frequency synthesized receiver prototype for FLEX roaming paging platform. This FLEX paging receiver board is a high

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

BF 3027

Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

transistor T1J

Abstract: NEC 9319 bjt npn
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

transistor NEC D 882

Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION

transistor gl 1117

Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN: