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    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Search Results

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5011

    Abstract: 2SC5011-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5011 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 6.5 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5011 2SC5011-T1 2SC5011 2SC5011-T1

    2SC5013

    Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5013 2SC5013-T1 2SC5013 2SC5013-T1 transistor r47 MARKINGR46 marking R46

    NTE316

    Abstract: No abstract text available
    Text: NTE316 Silicon NPN Transistor High Gain, Low Noise Amp Features: D High Current Gain–Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V


    Original     		PDF NTE316 100MHz 450MHz NTE316

    2SC5012-T1

    Abstract: transistor marking R37 ghz 2SC5012
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package


    Original     		PDF 2SC5012 2SC5012-T1 2SC5012-T1 transistor marking R37 ghz 2SC5012

    NESG210719

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719 NESG210719-A NESG210719-T1 NESG210719-T1-A PU10419EJ03V0DS

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1028 4N22 Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1042 4N22A Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR


    Original     		PDF 4N22A -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1044 4N24A Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR


    Original     		PDF 4N24A -65oC 125oC -55oC 100oC 260oC,

    NEC semiconductor

    Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-T1-A NESG210719-T1 NESG210719-A NEC semiconductor NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7

    NESG210719

    Abstract: NESG210719-T1
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-A NESG210719-T1-A NESG210719-T1 NESG210719 NESG210719-T1

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1030 4N24 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    npn 60V 600mw

    Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V


    Original     		PDF NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V

    NTE2672

    Abstract: VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp


    Original     		PDF NTE2672 100mA, NTE2672 VEBO-15V

    NTE47

    Abstract: No abstract text available
    Text: NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE47 200mA 100Hz 100MHz NTE47

    ssm2212

    Abstract: QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers
    Text: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz


    Original     		PDF SSM2212 SSM2212 SSM2212RZ SSM2212RZ-R7 SSM2212RZ-RL D09043-0-7/10 QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE


    Original     		PDF 2STR1215 2002/93/EC OT-23 OT-23 2STR1215 2STR2215

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” ” ” ”


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C typical High gain bandwidth product: 200 MHz


    Original     		PDF MAT12 MAT12 22306-A MAT12AHZ D09044-0-7/10

    12350

    Abstract: 2STD1665 2STD1665T4 D1665 st 833
    Text: 2STD1665 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed TAB 3 Applications 1 ■ Voltage regulators ■ High efficiency low voltage switching


    Original     		PDF 2STD1665 2STD1665T4 D1665 12350 2STD1665 2STD1665T4 D1665 st 833

    Untitled

    Abstract: No abstract text available
    Text: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan     		PDF ST13007

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio


    OCR Scan     		PDF ZTX1051A R100MHz lB-40mA, 100mA 0D11D3D

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5011

    NEC 2532 n 749

    Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822

    BUW48

    Abstract: Asg TRANSISTOR
    Text: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION


    OCR Scan     		PDF BUW48 BUW49 BUW48 BUW49 O-218 Asg TRANSISTOR