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    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Search Results

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE


    Original     		PDF 2STR1215 2002/93/EC OT-23 OT-23 2STR1215 2STR2215

    TS16949

    Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4

    ZETEX GATE DRIVER

    Abstract: MARKING 1D4
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F and49) 621-ZXTN07045EFFTA ZXTN07045EFFTA ZETEX GATE DRIVER MARKING 1D4

    TRANSISTOR MARKING 1d3

    Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F TRANSISTOR MARKING 1d3 ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF

    marking 1d4

    Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 marking 1d4 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F

    marking 269-3 sot23

    Abstract: NE68618-T1-A IC ua 741 T 0599
    Text: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 8639R NE68618-T1-A NE68619-T1-A NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 marking 269-3 sot23 IC ua 741 T 0599

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    making 2a sot23

    Abstract: ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F
    Text: ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2040F 500mV ZXTP2041F ZXTN2040FTA ZXTN2040FTC making 2a sot23 ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F

    ZXTP2041

    Abstract: ic 4446 P41 sot23 NPN
    Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2041F -500mV ZXTP2041F ZXTP2041FTA ZXTP2041FTC ZXTP2041 ic 4446 P41 sot23 NPN

    STC123SF

    Abstract: marking 123
    Text: STC123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STC123SF STC123SF OT-23F KST-2095-000 100mA 500mA, marking 123

    STD123S

    Abstract: PC 13001 TRANSISTOR
    Text: STD123S Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STD123S OT-23 KST-2059-002 100mA 500mA, STD123S PC 13001 TRANSISTOR

    AUK sot 123

    Abstract: marking 123
    Text: STD123S Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STD123S STD123S OT-23 KSD-T5C034-000 AUK sot 123 marking 123

    STD123SF

    Abstract: No abstract text available
    Text: STD123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STD123SF OT-23F KST-2095-001 100mA 500mA, STD123SF

    3STR1630

    Abstract: STMicroelectronics marking code date SOT 23
    Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits


    Original     		PDF 3STR1630 OT-23 OT-23 3STR1630 STMicroelectronics marking code date SOT 23

    marking code SS SOT23

    Abstract: marking code SS SOT23 transistor
    Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits


    Original     		PDF 3STR1630 OT-23 OT-23 marking code SS SOT23 marking code SS SOT23 transistor

    3STR1630

    Abstract: No abstract text available
    Text: 3STR1630 Low voltage high performance NPN power transistor Preliminary data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting


    Original     		PDF 3STR1630 OT-23 OT-23 3STR1630

    2STR1215

    Abstract: 2STR2215 JESD97
    Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications


    Original     		PDF 2STR1215 OT-23 OT-23 2STR1215 2STR2215. 2STR2215 JESD97

    2STR1160

    Abstract: 2STR2160 JESD97
    Text: 2STR1160 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description


    Original     		PDF 2STR1160 OT-23 OT-23 2STR2160. 2STR1160 2STR2160 JESD97

    85500 transistor

    Abstract: transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 NE685 CCE 7100
    Text: SILICON TRANSISTOR NE685 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER


    Original     		PDF NE685 8539R NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 85500 transistor transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 CCE 7100

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018

    ne666

    Abstract: 21421 Series ic 74600 NE686
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600

    702 TRANSISTOR sot-23

    Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100