HIGH HFE TRANSISTOR Search Results
HIGH HFE TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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HIGH HFE TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HN4A06JContextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J -120V HN4A06J | |
HN3C51F
Abstract: MARKING L toshiba TRANSISTOR 015G hn3c51 015G
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HN3C51F HN3C51F MARKING L toshiba TRANSISTOR 015G hn3c51 015G | |
HN4A51JContextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A51J -120V HN4A51J | |
hn3a51fContextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN3A51F -120V hn3a51f | |
HN4C51JContextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J HN4C51J | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
HN4C06J
Abstract: HN4C06
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HN4C06J 150oducts HN4C06J HN4C06 | |
smd marking ly
Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
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2SC4116 100mA, smd marking ly hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY | |
HN3C51FContextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN3C51F HN3C51F | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
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Contextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN3C51F | |
HN4A06JContextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J -120V HN4A06J | |
HN4C06JContextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J HN4C06J | |
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Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J -120V | |
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Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J | |
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Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J | |
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Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200 to 700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN3A51F | |
HN4C51JContextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J HN4C51J | |
2SC2713
Abstract: 2SA1163
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2SC2713 2SA1163 2SC2713 2SA1163 | |
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Contextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN3C51F | |
HN3A51FContextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN3A51F -120V HN3A51F | |
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Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
Marking 34-Q1Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A51J -120V Marking 34-Q1 | |