HIGH POWER BIPOLAR TRANSISTOR SELECTION Search Results

STN0214

Abstract: N0214 Power Bipolar Transistor
Contextual Info: STN0214 Very high voltage NPN power transistor Features • High gain ■ Very high voltage capability 4 Applications 1 ■ Haptic ■ High voltage solenoid driving 2 3 SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage

2sc5200

Abstract: 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor
Contextual Info: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description 1 2 3 TO-264 This device is a NPN transistor manufactured

bipolar transistor ghz s-parameter

Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Contextual Info: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in

2sd1047

Abstract: transistor 2sd1047 2SD1047 transistor
Contextual Info: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured

Contextual Info: 2STA1943 High power PNP epitaxial planar bipolar transistor PRELIMINARY DATA Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT= 30MHz Description 1 This device is a PNP transistor manufactured

T13005

Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
Contextual Info: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications

Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

schematic diagram motor control

Abstract: schematic diagram motor BUV298V JESD97
Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

2Sta1943

Abstract: 2STC5200 JESD97 TRANSISTOR POWER AMPLIFIER
Contextual Info: 2STA1943 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured

Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured

Contextual Info: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured

2STA1962

Abstract: 2STC5242 JESD97
Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured

2STC5242

Abstract: 2STA1962 JESD97
Contextual Info: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured

2sta2121

Abstract: 2STC5949 JESD97
Contextual Info: 2STC5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2STA2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured

2STC5200

Abstract: 2STA1943 JESD97
Contextual Info: 2STC5200 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured

RF Transistor s-parameter

Abstract: HBFP-0450 ADS MODEL HBFP0450
Contextual Info: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium

2ST5949

Abstract: 2ST2121 JESD97
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured

2sc5200 amplifier circuit

Abstract: 2SC5200 2sc5200 amplifier circuit diagram TRANSISTOR 2SC5200 2sc5200 amplifier schematic diagram power amplifier 2sc5200 transistor 2SC5200 Technical Data 2sc5200 transistor data 2sc5200 transistor transistor l 2050
Contextual Info: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz s ct Application ■ u d o Audio power amplifier r P e Description 1 2 3 TO-264 This device is a NPN transistor manufactured

Contextual Info: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier s

Contextual Info: 2STC4793 NPN power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1837 ■ High transition frequency, typical fT = 100 MHz s ct Applications ■ Audio power amplifier ■ Drive stage amplifier

Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT= 30MHz 3 Application 2 1 Audio power amplifier TO-3P Description

st marking code

Contextual Info: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier 3 1 2

RBSOA

Abstract: transistor crossover
Contextual Info: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor