HIGH POWER POWER AMPLIFIER Search Results
HIGH POWER POWER AMPLIFIER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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HIGH POWER POWER AMPLIFIER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 |
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SST12LP15A SST12LP15A 16contact DS75056A | |
SST12CP11Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the |
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SST12CP11 SST12CP11 DS75054A | |
Contextual Info: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V |
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RF3163 RF3164 RF3164 IS-95/CDMA RF3163 | |
Contextual Info: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire |
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SST11LP12 SST11LP12 16-contact DS75047A | |
HT40
Abstract: "channel estimation"
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SST11LP12 SST11LP12 16-contact DS75047A HT40 "channel estimation" | |
Contextual Info: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB |
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SST12LP15B SST12LP15 SST12LP15 16-contact DS75030A | |
16-vqfn-3x3-QVC-2
Abstract: SST12LP15B microchip at 2.45 GHz gp1215
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SST12LP15B SST12LP15 SST12LP15 16-contact DS75030A 16-vqfn-3x3-QVC-2 SST12LP15B microchip at 2.45 GHz gp1215 | |
2SD1073Contextual Info: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers |
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2SD1073 O-220AB SC-46 2SD1073 | |
2SD1073Contextual Info: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers |
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2SD1073 O-220AB SC-46 2SD1073 | |
tdk LAMBDA supply Circuit diagram
Abstract: rectifier module circuit diagram 48vdc circuits 4h35 Nippon Chemi-Con LXV LAMBDA los 28v series Nemic-Lambda GmbH Nippon capacitors tdk lambda power supply
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PAH450S PAH450S48 PAH350S48) PAF500F48) 48Vin semic5000 PAH450S48-0706E tdk LAMBDA supply Circuit diagram rectifier module circuit diagram 48vdc circuits 4h35 Nippon Chemi-Con LXV LAMBDA los 28v series Nemic-Lambda GmbH Nippon capacitors tdk lambda power supply | |
lm3875
Abstract: LM3875 Overture Audio Power Amplifier Series
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LM3875 LM3875 SNAS083C 20kHz. LM3875, LM3875 Overture Audio Power Amplifier Series | |
SE2576L
Abstract: se2576 sige SE2576L-R SE2576L-EK1 IEEE802 SIGE SEMICONDUCTOR
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SE2576L SE2576L 11bgn IEEE802 26dBm se2576 sige SE2576L-R SE2576L-EK1 SIGE SEMICONDUCTOR | |
JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
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SST12LP07 SST12LP072 11g/b 16F-6, S71321-02-000 JEP95 SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K | |
JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
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SST12LP07 SST12LP072 11g/b S71321-00-000 JEP95 SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K | |
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
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SST12LP07 SST12LP072 11g/b S71321-00-000 JEP95 SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K | |
MSC8004Contextual Info: MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W TYP @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers |
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MSC8004 MSC8004 | |
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n |
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SST12LP19E SST12LP19E 11b/g/n DS70005041C | |
2565T
Abstract: SE2565T-EV1 SE2565T-EK1 se2565 SE2565T
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SE2565T IEEE802 SE2565T 11bgn 23dBm DST-00265 2565T SE2565T-EV1 SE2565T-EK1 se2565 | |
Contextual Info: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for |
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RF5198 RF5184 RF5184 RF5198) RF5184) | |
SE2604L
Abstract: 2604L SE2604L-EV1 SE2604L-EK1 SE2604 HT20 HT40 JESD22-A114 SE2604L-R
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SE2604L SE2604L 11bgn IEEE802 23dBm 2604L SE2604L-EV1 SE2604L-EK1 SE2604 HT20 HT40 JESD22-A114 SE2604L-R | |
se2576
Abstract: 2576L sige 2576L SE2576L SE2576L-EV1 SE2576L-EK1 se2576L-R PDVP30
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SE2576L IEEE802 SE2576L 11bgn 26dBm DST-00260 se2576 2576L sige 2576L SE2576L-EV1 SE2576L-EK1 se2576L-R PDVP30 | |
SE2565T
Abstract: SE2565T-R SE2565T-EK1
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SE2565T SE2565T 11bgn IEEE802 23dBm SE2565T-R SE2565T-EK1 | |
2N5631
Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
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2N5631 2N5631/D 2N5631 high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100 | |
2576L
Abstract: se2576 SE2576L se2576L-R sige 2576L SE2576L-EV1
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SE2576L: IEEE802 SE2576L 11bgn 26dBm DST-00260 2576L se2576 se2576L-R sige 2576L SE2576L-EV1 |