HIGH POWER SPDT Search Results

1ghz bjt

Abstract: rf mems switch FMS2016 FMS2016-001 MIL-HDBK-263
Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

FMS2016-001

Abstract: MIL-HDBK-263 rf mems switch using Power Handling
Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

rf power amplifier 100w

Abstract: 100W POWER AMPLIFIER
Contextual Info: 409V-3519 - Hermetically Sealed, High Power SPDT Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.

TO metal package aluminum kovar

Contextual Info: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.

TO metal package aluminum kovar

Contextual Info: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.

A004R

Abstract: ALM-40220 RO4350 diode 944 1334
Contextual Info: ALM-40220 2.010GHz – 2.025GHz TD-SCDMA 10 Watt High Power SPDT Switch Data Sheet Description Features Avago Technologies’ ALM-40220 is a high power SPDT switch with 10W power handling capability, high linearity performance, low insertion loss and fast switching speed

FMS2014-001

Abstract: FMS2014QFN
Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die

FMS2014-001

Abstract: FMS2014QFN RFmd SPDT rf mems switch
Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die

RF1200

Abstract: RFmd SPDT rfmd qfn package 2x2 6-pin SPDT HIGH POWER
Contextual Info: RFMD RF1200 Broadband High Power SPDT Switch The RF1200 is a single-pole double-throw SPDT high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity and very good harmonic characteristics. It is fabricated in a

A114 es

Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die

2Ghz operating jfet

Abstract: CXG1006N 8 pin 4v power supply ic High Power Antenna Switch 8 pin 4v power switch ic
Contextual Info: CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation

Contextual Info: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

Y parameters of rf bjt

Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
Contextual Info: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

Contextual Info: SONY CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMiC. This !C is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation

10PIN

Abstract: CXG1134EN
Contextual Info: CXG1134EN High Power SPDT Switch with Logic Control Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs

Contextual Info: SONY CXG1016N High-Frequency SPDT Antenna Switch Description The CXG1016N is a high power antenna switch MMIC. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive power supply Features • Single positive power supply operation

hc84

Abstract: HC-89 HC86 HC-54 HC-69 kdi switch HC-96
Contextual Info: MEDIUM/HIGH POWER CW SPOT SWITCH ES SERIES HC REFLECTIVE GENERAL INFORMATION: KDI/Triangle Electronics SPDT RF switches, Series HC, ^mploy carefully selected high power diodes that are soldered to the metal housing, assur­ ing excellent electrical performance and CW power handling capability.

SSOP008-P-0044

Abstract: CXG1008N
Contextual Info: CXG1008N High-Frequency SPDT Switch Description The CXG1008N is a high-isolation switch MMIC. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive power supply. Features • Single positive power supply operation • High isolation

Contextual Info: CXG1134EN High Power SPDT Switch with Logic Control For the availability of this product, please contact the sales office. Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be

ES0189

Contextual Info: PRODUCT SPECIFICATION PS-ES0189 REV - MODEL NO.ES0189 SPDT SWITCH = PARAMETER 1.0 High Power Input Specifications 1.1 Frequency Range 1.2 Power, Peak nominal 1.3 Power, Average (nominal)

Contextual Info: TGS2352 DC – 12 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 12 GHz Input Power: up to 20 W Insertion Loss: < 1 dB Isolation: -35 dB typical

Contextual Info: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical

TGS2351

Abstract: high power SPDT EAR99 JESD22-A114 triquint SPDT 2002
Contextual Info: TGS2351 DC – 6 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 6 GHz Power Handling: up to 40 W Insertion Loss: < 0.8 dB Isolation: -40 dB typical

EAR99

Abstract: JESD22-A114 high power SPDT TGS2353
Contextual Info: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical