HIGH RADIANT POWER IR LED Search Results

Contextual Info: OD-11X11-C HIGH-POWER GaAIAs IR EMITTER CHIPS FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission • Good ohmic contacts gold alloys • Provides power output below 1mA

880nm

Abstract: OD-880-C
Contextual Info: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING

OD-880-C

Abstract: 880nm
Contextual Info: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING

OD-148-C

Abstract: OD-24X24-C OD-880-C ir-led
Contextual Info: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING

Contextual Info: 2014-02-05 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity

Contextual Info: HIGH-POWER GaAlAs IR EMITTER CHIPS OD-880-C FEATURES .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output • 880nm peak emission .014 • Good ohmic contacts gold alloys • Good bondability EMITTING

Contextual Info: OD-88O-C HIGH-POWER GaAIAs IR EMITTER CHIPS FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014 • 880nm peak emission • Good ohmic contacts gold alloys EMITTING SURFACE • Custom chips available

Contextual Info: 2014-01-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4341 Features: • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 11° High radiant intensity

Contextual Info: 2012-03-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 acc. to OS-PCN-2009-021-A2 SFH 4341 Features: • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 11° High radiant intensity

Contextual Info: 2014-01-16 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity

MA103

Abstract: IR LED 800 nm
Contextual Info: 2012-12-03 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 acc. to OS-PCN-2009-021-A2 SFH 4550 Features: • • • • • Besondere Merkmale: High Power Infrared LED Narrow emission angle ± 3° Very high radiant intensity

Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 20mW typical of power and 13mW/sr of radiant intensity.

OD-11X11-C

Abstract: Opto Diode 11X11
Contextual Info: 5 SE t> OPTO DIODE CORP m bflom a ooooiai 120 mopi> T - n t - 13 HIGH-POWER GaAIAs IR EMITTER CHIPS .011 OD-11X11-C FEATURES • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .011 • 880nm peak emission

Contextual Info: 2014-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / gemäß: OS-PCN-2009-021-A2 SFH 4350 Features: • • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 13° Very high radiant intensity

Contextual Info: 2012-05-21 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 / gemäß: OS-PCN-2009-021-A2 SFH 4350 Features: • • • • • Besondere Merkmale: High Power Infrared LED Emission angle ± 13° Very high radiant intensity

Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMTQ810N Lead Pb Free Product – RoHS Compliant SMTQ810N High Performance Infrared TOP IR LED SMTQ810N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power and 20mW/sr of radiant Intensity.

SMT810N

Abstract: 810nm
Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMT810N Lead Pb Free Product – RoHS Compliant SMT810N High Performance Infrared TOP IR LED SMT810N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power and 20mW/sr of radiant Intensity.

Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMTQ870 Lead Pb Free Product – RoHS Compliant SMTQ870 High Performance Infrared TOP IR LED SMTQ870 consists of an AlGaAs LED mounted on the lead frame as TOP LED PLCC4 package and is 40mW typical of output power and 40mW/sr of radiant Intensity.

Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 20mW typical of power and 13mW/sr of radiant intensity.

Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMT940D Lead Pb Free Product – RoHS Compliant SMT940D High Performance Infrared TOP IR LED SMT940D consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 20mW typical of power and 13mW/sr of radiant intensity.

Contextual Info: OPTO D I OD E CORP SSE D • böG m ä GODOIMI fifib H O P D T ^ v l - OD-88O-C HIGH-POWER GaAIAs IR EMITTER CHIPS -.0 1 4 - FEATURES o EMITTING • High reliability LPE GaAIAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014

SMT850D-23

Abstract: 850nm
Contextual Info: epitex Opto-Device & Custom LED SMT850D-23 TOP IR LED SMT850D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT850D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.

Contextual Info: epitex Opto-Device & Custom LED SMT940D-23 TOP IR LED SMT940D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT940D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.

Contextual Info: epitex Opto-Device & Custom LED SMT940D-23 TOP IR LED SMT940D-23 Lead Pb Free Product – RoHS Compliant High Performance Infrared TOP IR LED with lens SMT940D-23 consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 22mW typical of power and 60mW/sr of radiant intensity.