HIGH SPEED SWITCHING NPN SOT23 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.

MMBT2369

Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Contextual Info: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol

2n2222a SOT23

Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
Contextual Info: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2n2222a SOT23

Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
Contextual Info: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

ts 4141

Abstract: ts 4141 TRANSISTOR 2N2369A 2N2369ACSM
Contextual Info: 2N2369ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2369A

Abstract: 2N2369ACSM
Contextual Info: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN

2n2222a SOT23

Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2222ACSM

Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

KTN2369AS

Abstract: KTN2369S KTN2369
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. MAXIMUM RATINGS Ta=25°C

Contextual Info: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings

SOT-23 marking l31

Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
Contextual Info: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film

2N2222A LCC1

Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

KTN2369AS

Abstract: KTN2369S HIGH SPEED SWITCHING NPN SOT23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX

CMPT2369

Contextual Info: Central CMPT2369 TM Semiconductor Corp. DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

MARKING CODE c2r sot 23

Contextual Info: Central" Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number

2STR1160

Abstract: 2STR2160 JESD97
Contextual Info: 2STR1160 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description

2STR1215

Abstract: 2STR2215 JESD97
Contextual Info: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number

Contextual Info: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE

2STR1230

Abstract: 2STR2230 JESD97
Contextual Info: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■