HIGH VEBO Search Results

VEBO-15V

Abstract: 2SC3651
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.

Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0)

2SC5018

Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0

Contextual Info: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage

buy48

Abstract: buy47
Contextual Info: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage

buy47

Contextual Info: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage

Contextual Info: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage

Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High emitter to base voltage VEBO

2SC3134

Abstract: 2SA1252 ITR03076 ITR03077
Contextual Info: 2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SC3135

Abstract: 2SA1253 ITR03091 ITR03092 ITR03093 ITR03094
Contextual Info: Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2033A [2SA1253/2SC3135] 2.2 3.0 4.0 15.0

Contextual Info: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO

High Vebo

Abstract: 2SC3134 2SA1252 EN1048B
Contextual Info: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base

MARKING SMD npn TRANSISTOR 1a

Abstract: MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

Contextual Info: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD1474

Contextual Info: Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • High emitter-base voltage Collector open VEBO

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

KSC5030

Abstract: 5.1B1 transistor pc-100
Contextual Info: KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VCBO Symbol 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO

KSC5027

Abstract: NPN Transistor 1.5A 400V NPN Transistor 1.5A 5V transistor 800V 1A
Contextual Info: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic Symbol VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO

2SC3134

Contextual Info: 2SA1252 / 2SC3134 Ordering number : EN1048D 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252 Absolute Maximum Ratings at Ta=25°C

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)