VEBO-15V
Abstract: 2SC3651
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.
|
Original
|
PDF
|
2SC3651
100mA
100mA
VEBO-15V
2SC3651
|
Untitled
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0)
|
Original
|
PDF
|
2SC5018
|
2SC5018
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0
|
Original
|
PDF
|
2SC5018
2SC5018
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage
|
Original
|
PDF
|
BUY48X
O-205AD)
71mW/Â
Par825
|
buy48
Abstract: buy47
Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage
|
Original
|
PDF
|
BUY47,
BUY48
O-205AD)
BUY47
BUY48
|
buy47
Abstract: No abstract text available
Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage
|
Original
|
PDF
|
BUY47,
BUY48
O-205AD)
BUY47
71mW/Â
buy47
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage
|
Original
|
PDF
|
BUY48X
O-205AD)
|
Untitled
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High emitter to base voltage VEBO
|
Original
|
PDF
|
2SC5018
|
2SC3134
Abstract: 2SA1252 ITR03076 ITR03077
Text: 2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252
|
Original
|
PDF
|
2SA1252
2SC3134
EN1048D
2SA1252
150on
2SC3134
ITR03076
ITR03077
|
Untitled
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
|
Original
|
PDF
|
2SC5069
250mm
|
2SC3135
Abstract: 2SA1253 ITR03091 ITR03092 ITR03093 ITR03094
Text: Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2033A [2SA1253/2SC3135] 2.2 3.0 4.0 15.0
|
Original
|
PDF
|
ENN1049E
2SA1253/2SC3135
2SA1253/2SC3135]
2SA1253
2SC3135
2SA1253
ITR03091
ITR03092
ITR03093
ITR03094
|
Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
|
Original
|
PDF
|
2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
|
High Vebo
Abstract: 2SC3134 2SA1252 EN1048B
Text: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base
|
Original
|
PDF
|
EN1048B
2SA1252/2SC3134
2SA1252/2SC3134]
2SA1252
High Vebo
2SC3134
2SA1252
EN1048B
|
MARKING SMD npn TRANSISTOR 1a
Abstract: MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
|
Original
|
PDF
|
2SC5069
250mm
MARKING SMD npn TRANSISTOR 1a
MARKING SMD NPN TRANSISTOR BR
transistor smd marking cu
2SC5069
SMD TRANSISTOR 1A NPN
VEBO-15V
|
|
|
2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
|
Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
|
Original
|
PDF
|
2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
|
2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
100mV
2SD2144S
SC-72
T146
|
2SD1474
Abstract: No abstract text available
Text: Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • High emitter-base voltage Collector open VEBO
|
Original
|
PDF
|
2SD1474
2SD1474
|
2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
|
2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
SC-72
T146
|
KSC5030
Abstract: 5.1B1 transistor pc-100
Text: KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VCBO Symbol 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO
|
Original
|
PDF
|
KSC5030
KSC5030
5.1B1
transistor pc-100
|
KSC5027
Abstract: NPN Transistor 1.5A 400V NPN Transistor 1.5A 5V transistor 800V 1A
Text: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic Symbol VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO
|
Original
|
PDF
|
KSC5027
O-220
KSC5027
NPN Transistor 1.5A 400V
NPN Transistor 1.5A 5V
transistor 800V 1A
|
2SC3134
Abstract: No abstract text available
Text: 2SA1252 / 2SC3134 Ordering number : EN1048D 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252 Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EN1048D
2SA1252
2SC3134
2SA1252
2SC3134
|
Untitled
Abstract: No abstract text available
Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)
|
Original
|
PDF
|
2SD2114K
500mA
SC-59
R1120A
|
