HIGH VOLTAGE 10KV IGBT Search Results

Contextual Info: Series OLS10KD 10kW HIGH VOLTAGE POWER SUPPLY FEATURES Wide Dynamic range with dual supply coniguration Output Voltages from 1kV to 100kV for high range Output Voltages from 100V to 10kV for low range High Packing Density: 10kW output power in 6U rack mounted chassis

capacitor 20mf

Abstract: high voltage 10kv igbt dry capacitor capacitor MKP igbt
Contextual Info: MKP-DC Filter Capacitors General Information Vishay ESTA MKP-DC-Filter Capacitors, Dry, Self-healing, Segmented VOLTAGE RANGE: UP TO 10kV CAPACITANCE RANGE: UP TO 20mF MAIN CHARACTERISTICS • High energy density and minimum dimensions • High rms currents and peak currents

Resonant Half-Bridge converter

Abstract: EN50081 10kv transformer TRANSFORMER 20KVA,
Contextual Info: Industrial Power Supply Type AHV 20-10 Description The AHV 20-10 is one of a range of high voltage AC power supplies designed for a variety of industrial applications. In its standard form, the power supply provides up to 10kV output from a 415V, 3-phase, 50/60Hz output. Efficiency is in excess of 95%. The Power Supply is

10kva

Abstract: 10kv transformer
Contextual Info: Industrial Power Supply Type AHV 10-10 Description The AHV 10-10 is one of a range of high voltage AC power supplies designed for a variety of industrial applications. In its standard form, the power supply provides up to 10kV output from a 415V, 3-phase, 50/60Hz supply. Efficiency is in excess of 95%. The Power Supply is

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

10KV SiC

Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Contextual Info: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA

IGBT presspack

Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E
Contextual Info: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single

SMD 5730

Abstract: optocoupler smd 16 pin DSA00105785 SMD Transistor 1020 HCPL-5501 HCPL-5600 HCPL-6250 TRANSISTOR 610 smd smd transistor 5401 HCPL-5120
Contextual Info: Hermetic Optocouplers Hermetic Optocoupler Packages 8-Pin DIP 16-Pin DIP 20 Pad LCCC 16-Pin Flat Pack Optoisolation Products Hermetic Optocouplers Hermetic Options available on 8 and 16 pin DIP packages 100 = Butt Cut Leads (cut to just below seating plane)

47MF

Abstract: APTRG8A120
Contextual Info: APTRG8A120 VCmax = 1200V IOUTpeak = 8A @ Tc = 25°C Dual IGBT Isolated Driver +V1 VC1 SHORT CI RCUIT P ROTECTION 0V1 H1 Goff1 Logic Circuit 0V1 DRIVER 1 0V1 - V1 RESET Drive Interlock VC2 +V2 SHORT CI RCUIT P ROTECTION 0V2 GND Gon2 Goff2 + 5V 0/15V ISOLATED DC /DC

APTRG8A120G

Abstract: igbt driver circuit diagram cut off voltage Isolated Driver 47MF circuit diagram for igbt driver
Contextual Info: APTRG8A120G VCmax = 1200V IOUTpeak = 8A @ Tc = 25°C Dual IGBT Isolated Driver Non Inverting +V1 SHORT CIRCUIT PROTECTION 0V1 H1 Gon1 Goff1 0V1 DRIVER 1 0V1 - V1 RESET Drive Interlock VC2 +V2 SHORT CIRCUIT PROTECTION 0V2 GND Gon2 Goff2 +5V 0/15V ISOLATED DC/DC

UL1577

Abstract: K 2611 MOSFET hcpl 636 B0738 mosFET K 2611 HCPL 611 ic hp 4503 motor IG 2200 19 x 000 15 r CMW11M K 2611 MOSFET VOLTAGE RATING
Contextual Info: Optocoupler and Solid State Relay Selection Flowchart LEO Cumnl IF « « I inA JZTZ3 WUMand VI 200 Voto 1 WMMand VI 400 Volt» I RonMOtaM n HSSM2D0 ReIla 0.7 <tana Standard CMR KSSA-MOO E -i HSSR-MW Singla Channtl Owl Channol Surto» Mount VoMago VoMpo ^IhndlnH

TLP351

Abstract: fet drive inverter inverter air toshiba Power MOS FET Gate Drive
Contextual Info: TOSHIBA TENTATIVE TLP351 TOSHIBA PHOTOCOUPLER GaAIAs IRED & PHOTO-IC TLP351 INVERTER FOR AIR CONDITIONOR IGBT/Power MOS FET GATE DRIVE Unit mm INDUSTRIAL INVERTER The TOSHIBA TLP351 consists of a GaAIAs light emitting diode and a integrated photodetector.

Contextual Info: Series OL1K HIGH VOLTAGE POWER SUPPLY FEATURES 1kW of output power Output voltages from 1kV to 60kV Positive or Negative polarity to order Analogue meter or blank front panel options IGBT switch mode technology Local or remote operation Marked for EU LV Directive 73/23/EEC

HITEK POWER

Abstract: 73/23/EEC
Contextual Info: Series OL3000 3kW HIGH VOLTAGE POWER SUPPLY FEATURES 3kW of output power Output voltages from 1kV to 60kV Positive or Negative polarity to order OEM version available IGBT switch mode technology Local or remote operation Marked for EU LV Directive 73/23/EEC

mosfet based power inverter project

Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
Contextual Info: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.

10KV SiC

Contextual Info: Fourth Quarter 2004 Volume16, Number 4 ISSN 1054-7231 In This Issue President’s Message. . . . . . . . . . . . . 3 From The Editor . . . . . . . . . . . . . . . . 4 Aachen Meeting Minutes . . . . . . . . . 4 APEC 2005 . . . . . . . . . . . . . . . . . . . 6

Contextual Info: CPC3140 Optically Isolated IGBT Gate Drive Circuit Features Description • 0.4A Minimum Peak Output Current • High Speed Response: 1.0 s Maximum Propagation delay • 1.0V Maximum Low Level Output Voltage VOL Eliminates the Need for Negative Gate Drive

Contextual Info: Series OL600W 600W HIGH VOLTAGE POWER SUPPLY FEATURES Output Voltages from 1kV to 80kV High Packing Density - 600W in 1U Exceptional Reliability Complies with SEMI F47 Standard High Stability Arc Count and Extinguish ACE Marked for EU LV Directive 73/23/EEC

Contextual Info: Series OL400W 400W HIGH VOLTAGE POWER SUPPLY FEATURES Output Voltages from 1kV to 80kV High Packing Density - 400W in 1U Exceptional Reliability Complies with SEMI F47 Standard High Stability Arc Count and Extinguish ACE Marked for EU LV Directive 73/23/EEC

fod3180 applications

Abstract: sustain driver for plasma tv FOD3180 plasma tv schematic diagram
Contextual Info: FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Features Description • Guaranteed operating temperature range of -40°C to The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide AlGaAs light emitting diode

SEMIKRON SKHI 65

Abstract: SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver
Contextual Info: ✓ plug + play ✓ protection ✓ easy interface ✓ integrated DC-DC converter ✓ 4kV isolation IGBT and MOSFET SKHI - Drivers Integrated Components and Integrated Solutions SEMIKRON - IGBT/MOSFET Drivers SKHI SEMIKRON - Driver ASICs SKIC SKHI-DRIVER ✓ Protection

D6332

Contextual Info: Series OLS10K 10kW HIGH VOLTAGE POWER SUPPLY FEATURES High Packing Density: 10kW output power in 6U rack mounted chassis Output voltages from 1kV to 100kV Parallel option to give 20kW Exceptional reliability in severe electrical environments High Stability

eupec igbt 10kv

Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
Contextual Info: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 thomas.schuetze@eupec.com In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology

6 pin pulse transformer 4503 circuit diagram

Abstract: l0534 HCPL 601 motor IG 2200 19 x 00 15 r ADC60-08 L4562 BD transistor smd Optocoupler 601 8 pin smd l0631 l0601
Contextual Info: Optocoupler Preference Guide . • • • • * *•••* ••• • • •. . * • • • * ’• Agilent Technologies •• ? *. Innovating the HP Way Introducing A g ile n t Technologies, the result of H e w le tt-P a c k a rd 's stra te g ic re a lig n m e n t of its