HIGH VOLTAGE 13001 Search Results

13001 TRANSISTOR

Abstract: 13001 npn transistor 13001 ST 13001 13001 TRANSISTOR equivalent st 13001 TRANSISTOR NPN transistor 13001 npn 13001 13001 transistor TO-92 13001
Contextual Info: ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage

13001 TRANSISTOR sw

Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
Contextual Info: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

13001 switching 5V 1A supply

Abstract: 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001
Contextual Info: 2SD2645 Ordering number : ENN6897B NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

13001 TRANSISTOR

Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
Contextual Info: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

13001 TRANSISTOR

Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
Contextual Info: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

13001 TRANSISTOR

Abstract: 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001
Contextual Info: Ordering number : ENN6897 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.

2sd2645

Abstract: transistor s 13001 13001 HF
Contextual Info: Ordering number : ENN6897 NPN Triple Diffused Planar Silicon Transistor 2SD2645 ISA/iYO Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).

Contextual Info: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .

ZX60-2411BM-S

Abstract: GA955 46dBm
Contextual Info: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US patent 6,790,049 CASE STYLE: GA955

Contextual Info: High Linearity ZX60-2411BM+ ZX60-2411BM Amplifier 50Ω, 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049

Contextual Info: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049 CASE STYLE: GA955

Contextual Info: High Linearity ZX60-2411BM+ ZX60-2411BM Amplifier 50Ω, 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049

Contextual Info: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US patent 6,790,049 CASE STYLE: GA955

Contextual Info: High Linearity Amplifier 50Ω, ZX60-2411BM 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049 CASE STYLE: GA955

2SD617

Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
Contextual Info: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm

DKV6520-24

Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV6520 Series Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts Linear Frequency vs. Voltage Characteristics Types DKV6520 Series

Contextual Info: PI90LV031A PI90LV027A PI90LV017A 3V LVDS High-Speed Differential Line Drivers Features Description • Signaling Rates >400Mbps 200 MHz The PI90LV031A, PI90LV027A, and PI90LV017A are differential line drivers that use low-voltage differential signaling (LVDS)

si 13001

Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
Contextual Info: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm

j5021

Contextual Info: Polymer PTC Resettable Fuse: KRT Series Radial Lead Type For Telecom Applications Features 1. RoHS & Halogen-Free HF compliant 2. Hold current ratings from 0.08 A to 0.18A 3. High operating voltage rating :100Vdc/250Vdc 4. Resettable for over-current protection

Contextual Info: Microwave Abrupt Tuning Diodes and Chips Features • ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage Meet All MIL-STD-750 Requirements Types ■ ■ DVH6700 Series

acer lcd inverter

Abstract: samsung lcd tv inverter acer inverter lcd m150xn05 ChiMei acer inverter LTM-170eh l170e3 tv lg LCD LTM170EH-01
Contextual Info: For LCD M'TR / LCD TV FEATURES The inverter is designed as low noise, high efficiency and small size. It can be wide input voltage range, wide output current range and stringent environment. Custom designs are available upon request. OPERATION CONDITION AND TEST CONDITION

Contextual Info: Silicon Hyperabrupt Varactors for General Wide Band Applications EBAIpha CKV2020 Series exDKV6520 Series Features • Extremely High Frequency Operation ■ Capacitance Values of 20 pF to 200 pF at 4 Volts ■ Octave Tuning from 4 to 20 Volts ■ Linear Frequency vs Voltage Characteristics

OP282GBC

Abstract: OP482ARC 282A r28 ADI LOT CODE IE 0P482 0P282 OP282G OP482s op282 die OP482GBC
Contextual Info: ANALOG DEVICES □ FEATURES High Slew Rate: 9 V/|is Wide Bandwidth: 4 MHz Low Supply Current: 250 piA/Amplifier Low Offset Voltage: 3 mV Low Bias Current: 100 pA Fast Settling Time Common-Mode Range includes V + Unity Gain Stable APPLICATIONS Active Filters

Contextual Info: Solid State Relays System Monitoring Relays Sense Relay Type RA. .S • System (line and load) monitoring relay • Zero switching • Rated operational current: 25, 50 and 90 AACrms • Rated operational voltage: 120, 230 and 400 VACrms • High surge current capability