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    HIGH VOLTAGE 13001 Search Results

    HIGH VOLTAGE 13001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE 13001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13001 TRANSISTOR

    Abstract: 13001 npn transistor 13001 ST 13001 13001 TRANSISTOR equivalent st 13001 TRANSISTOR NPN transistor 13001 npn 13001 13001 transistor TO-92 13001
    Text: ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage


    Original     		PDF

    13001 TRANSISTOR sw

    Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
    Text: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN6897A 2SD2645 2SD2645] 13001 TRANSISTOR sw 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply

    13001 switching 5V 1A supply

    Abstract: 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001
    Text: 2SD2645 Ordering number : ENN6897B NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF 2SD2645 ENN6897B 13001 switching 5V 1A supply 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001

    13001 TRANSISTOR

    Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
    Text: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN6896 2SC5690 2SC5690] 13001 TRANSISTOR 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001

    13001 TRANSISTOR

    Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
    Text: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN6896A 2SC5690 2SC5690] 13001 TRANSISTOR transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087

    13001 TRANSISTOR

    Abstract: 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001
    Text: Ordering number : ENN6897 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		PDF ENN6897 2SD2645 2SD2645] 13001 TRANSISTOR 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001

    ZX60-2411BM-S

    Abstract: GA955 46dBm
    Text: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US patent 6,790,049 CASE STYLE: GA955


    Original     		PDF ZX60-2411BM+ GA955 ZX60-2411BM-S GA955 46dBm

    Untitled

    Abstract: No abstract text available
    Text: High Linearity ZX60-2411BM+ ZX60-2411BM Amplifier 50Ω, 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049


    Original     		PDF ZX60-2411BM+ ZX60-2411BM GA955 ZX60-2411BM-S+ ZX60-2411BM-S 2002/95/EC) ZX60-2411BM

    Untitled

    Abstract: No abstract text available
    Text: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049 CASE STYLE: GA955


    Original     		PDF ZX60-2411BM+ GA955 ZX60-2411BM-S+ 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: High Linearity ZX60-2411BM+ ZX60-2411BM Amplifier 50Ω, 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049


    Original     		PDF ZX60-2411BM+ ZX60-2411BM GA955 ZX60-2411BM-S+ ZX60-2411BM-S 2002/95/EC) ZX60-2411BM

    Untitled

    Abstract: No abstract text available
    Text: High Linearity Amplifier 50Ω ZX60-2411BM+ 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US patent 6,790,049 CASE STYLE: GA955


    Original     		PDF ZX60-2411BM+ GA955 ZX60-2411BM-S+ 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: High Linearity Amplifier 50Ω, ZX60-2411BM 800 MHz to 2400 MHz Features • • • • • • • High linearity High IP3, +46 dBm typ Reverse voltage connection protected 4.5V - 5.5V operation Small size Low cost Protected by US Patent 6,790,049 CASE STYLE: GA955


    Original     		PDF ZX60-2411BM GA955 ZX60-2411BM-S ZX60-2411BM

    2SD617

    Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
    Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm


    Original     		PDF ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P

    Untitled

    Abstract: No abstract text available
    Text: PI90LV031A PI90LV027A PI90LV017A 3V LVDS High-Speed Differential Line Drivers Features Description • Signaling Rates >400Mbps 200 MHz The PI90LV031A, PI90LV027A, and PI90LV017A are differential line drivers that use low-voltage differential signaling (LVDS)


    Original     		PDF PI90LV031A PI90LV027A PI90LV017A 400Mbps PI90LV031A, PI90LV027A, PI90LV017A 350mV 350mV) PI90LV031A

    acer lcd inverter

    Abstract: samsung lcd tv inverter acer inverter lcd m150xn05 ChiMei acer inverter LTM-170eh l170e3 tv lg LCD LTM170EH-01
    Text: For LCD M'TR / LCD TV FEATURES The inverter is designed as low noise, high efficiency and small size. It can be wide input voltage range, wide output current range and stringent environment. Custom designs are available upon request. OPERATION CONDITION AND TEST CONDITION


    Original     		PDF LD12062-01 LD12065-01 LD12077-01 LD12081-01 LC12001-02 LD12018-06 M150XN05 M150X4-T02 L150X2M-1 acer lcd inverter samsung lcd tv inverter acer inverter lcd m150xn05 ChiMei acer inverter LTM-170eh l170e3 tv lg LCD LTM170EH-01

    Untitled

    Abstract: No abstract text available
    Text: Solid State Relays System Monitoring Relays Sense Relay Type RA. .S • System (line and load) monitoring relay • Zero switching • Rated operational current: 25, 50 and 90 AACrms • Rated operational voltage: 120, 230 and 400 VACrms • High surge current capability


    Original     		PDF

    2sd2645

    Abstract: transistor s 13001 13001 HF
    Text: Ordering number : ENN6897 NPN Triple Diffused Planar Silicon Transistor 2SD2645 ISA/iYO Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).


    OCR Scan     		PDF ENN6897 2SD2645 2SD2645] 2sd2645 transistor s 13001 13001 HF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .


    OCR Scan     		PDF ENN6896 2SC5690 2SC5690]

    si 13001

    Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor

    DKV6520-24

    Abstract: No abstract text available
    Text: Silicon Hyperabrupt Tuning Diodes DKV6520 Series Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts Linear Frequency vs. Voltage Characteristics Types DKV6520 Series


    OCR Scan     		PDF DKV6520 CKV2020 DKV3801 DKV3802 DKV3803 DKV3804 unV3802-29 DKV3802-30 DKV3802-31 DKV6520-24

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001

    Untitled

    Abstract: No abstract text available
    Text: Microwave Abrupt Tuning Diodes and Chips Features • ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage Meet All MIL-STD-750 Requirements Types ■ ■ DVH6700 Series


    OCR Scan     		PDF MIL-STD-750 DVH6700 CVH2000

    Untitled

    Abstract: No abstract text available
    Text: Silicon Hyperabrupt Varactors for General Wide Band Applications EBAIpha CKV2020 Series exDKV6520 Series Features • Extremely High Frequency Operation ■ Capacitance Values of 20 pF to 200 pF at 4 Volts ■ Octave Tuning from 4 to 20 Volts ■ Linear Frequency vs Voltage Characteristics


    OCR Scan     		PDF CKV2020 exDKV6520 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11

    OP282GBC

    Abstract: OP482ARC 282A r28 ADI LOT CODE IE 0P482 0P282 OP282G OP482s op282 die OP482GBC
    Text: ANALOG DEVICES □ FEATURES High Slew Rate: 9 V/|is Wide Bandwidth: 4 MHz Low Supply Current: 250 piA/Amplifier Low Offset Voltage: 3 mV Low Bias Current: 100 pA Fast Settling Time Common-Mode Range includes V + Unity Gain Stable APPLICATIONS Active Filters


    OCR Scan     		PDF 0P-282/0P-482 OP-282 14-Lead OP-282/OP-482 OP-282 OP-482 OP282GBC OP482ARC 282A r28 ADI LOT CODE IE 0P482 0P282 OP282G OP482s op282 die OP482GBC