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    HIGH VOLTAGE DIODE KV Search Results

    HIGH VOLTAGE DIODE KV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP153KX18D
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331BD7LP473KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC332DD7LP154KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LQ154KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ334KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH VOLTAGE DIODE KV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    esjc

    Abstract: diode SM N6040 esjc03-09
    Contextual Info: E S J C 0 3 9 kv S ± 'J M fl^tSSs : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC 03», ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.


    OCR Scan     		ESJC03 ESJC03-09 esjc diode SM N6040 esjc03-09 PDF

    Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for


    OCR Scan     		TVR30 UL94V PDF

    horizontal deflection system of crt

    Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 1 !> This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for


    OCR Scan     		2500pF horizontal deflection system of crt PDF

    Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for


    OCR Scan     		TVR-20 2500pF UL94V PDF

    HP-214A

    Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for


    OCR Scan     		TVR30 UL94V HP-214A PDF

    Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR 30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for


    OCR Scan     		UL94V PDF

    BYX13

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high


    Original     		M3D354 BYX133GL BYX133GL OD119AB MAM420 SCA60 135106/00/01/pp4 BYX13 PDF

    ESJC01-12B

    Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
    Contextual Info: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size


    OCR Scan     		ESJC01 ESJC01-09B ESJC01-12B ESJC01 ESJC0I-09B ESX0I-09B ESJC0I-098 IR 9515 a1t diode PDF

    Electronic car ignition circuit

    Abstract: car electronic ignition automotive ignition CAR IGNITION sod125 HIGH ENERGY IGNITION CIRCUIT ignition system BYX133GPL SCA73
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION


    Original     		M3D473 BYX133GPL SCA73 613510/02/pp8 Electronic car ignition circuit car electronic ignition automotive ignition CAR IGNITION sod125 HIGH ENERGY IGNITION CIRCUIT ignition system BYX133GPL SCA73 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX134GPS High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPS FEATURES DESCRIPTION


    Original     		M3D350 BYX134GPS OD118A SCA73 613510/02/pp8 PDF

    automotive ignition

    Abstract: CAR IGNITION Electronic car ignition circuit
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION


    Original     		M3D473 BYX135GPL SCA73 613510/02/pp8 automotive ignition CAR IGNITION Electronic car ignition circuit PDF

    Electronic car ignition circuit

    Abstract: automotive ignition CAR IGNITION
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX132GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPL FEATURES DESCRIPTION


    Original     		M3D473 BYX132GPL SCA73 613510/02/pp8 Electronic car ignition circuit automotive ignition CAR IGNITION PDF

    diode Cathode indicated by blue band

    Abstract: automotive ignition Electronic car ignition circuit
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION


    Original     		M3D473 BYX134GPL SCA73 613510/02/pp8 diode Cathode indicated by blue band automotive ignition Electronic car ignition circuit PDF

    BP317

    Abstract: BYX133GPL MBL155
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high


    Original     		M3D473 BYX133GPL 613510/01/pp8 BP317 BYX133GPL MBL155 PDF

    BP317

    Abstract: BYX134GL
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D458 BYX134GL High-voltage car ignition diode Product specification 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D458 BYX134GL OD119AC 603502/01/pp4 BP317 BYX134GL PDF

    BP317

    Abstract: BYX132GL
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D354 BYX132GL OD119AB 135002/01/pp4 BP317 BYX132GL PDF

    BP317

    Abstract: BYX134GPS 135-002
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX134GPS High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D350 BYX134GPS OD118A 135002/01/pp8 BP317 BYX134GPS 135-002 PDF

    b49 diode

    Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
    Contextual Info: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size


    OCR Scan     		ESJC04 EaTS30S3 I95t/R89 Shl50 b49 diode ESJC04-05 F151 T760 micro wave oven esjc0405 PDF

    BP317

    Abstract: BYX134GPL
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high


    Original     		M3D473 BYX134GPL 613510/01/pp8 BP317 BYX134GPL PDF

    BYX133GPS

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX133GPS High-voltage car ignition diode Product specification 2002 Jan 24 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D350 BYX133GPS OD118A SCA74 613510/01/pp8 BYX133GPS PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D459 BYX135GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D459 BYX135GL OD119AD 135002/01/pp4 PDF

    BYX132GPS

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX132GPS High-voltage car ignition diode Product specification 2002 Jan 24 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D350 BYX132GPS OD118A SCA74 613510/01/pp8 BYX132GPS PDF

    BP317

    Abstract: BYX135GPL SOD125
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high


    Original     		M3D473 BYX135GPL 613510/01/pp8 BP317 BYX135GPL SOD125 PDF

    BYX135GPS

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX135GPS High-voltage car ignition diode Product specification 2002 Jan 24 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPS FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed


    Original     		M3D350 BYX135GPS OD118A SCA74 613510/01/pp8 BYX135GPS PDF