HIGH VOLTAGE DIODE KV 50 MA Search Results

IEC61000

Abstract: BAR90-02LRH IEC61000-4-4 diode E8 package marking
Contextual Info: ESD5V3L1U-02LRH Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines up to: IEC61000-4-2 ESD : ±30 kV (air / contact) IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns) IEC61000-4-5 (surge): 6 A (8/20 µs) • Reverse working voltage: 5.3 V max.

marking Z1

Abstract: BCR847BF
Contextual Info: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V

BZX93

Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
Contextual Info: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409

TNY254 equivalent

Abstract: TNY254 TNY254 pn NEC varistor 022 Siemens sfh615 optocoupler TM501 TNY254P harris mov 120 vac TNY254 internal varistor 222
Contextual Info: Engineering Prototype Report EPR-000008 Title 1.2 W, Universal Input, Non-isolated, TNY254 (EP8) Customer Home Appliance Market Author S.L. Document Number EPR-000008 Date 08-May-2001 Revision 10 Abstract This document presents the specification, schematic & BOM, inductor calculation, test

dil reed relay

Abstract: V23100-V4605-A010 V23100-V4015-A010 V23100-V4015-A000 V23100-V4005-A000 V23100-V4312-C000 V23100-V4 V23100 V23100V4312C000 2-1393763-8 V23100-V4305C010
Contextual Info: Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Telecom-, Signal and RF Relays Reed V23100-V4 Relay 108-98011 • July, 07 Rev. C • ECOC: JM10 Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Disclaimer While Tyco Electronics has made every reasonable effort

transistor fn 1016

Contextual Info: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

M3D08

Abstract: PESD12V2S2UT PESD15V2S2UT marking code diode u4 marking code u1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D08 PESDxS2UT series Double ESD protection diode Product specification 2003 May 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UT series FEATURES DESCRIPTION • Uni-directional ESD protection of 2-lines or bi-directional

234 optocoupler

Abstract: SOT230
Contextual Info: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and

CNX82A

Abstract: philips cnx82a
Contextual Info: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC

IP4056

Abstract: SIMCARD Schematic Hdmi to micro usb wiring diagram ip4065cx11 SD-Card MMC IP4826CX12 IP4056CX8 IP4058CX8 IP5002CX8 back2back diode
Contextual Info: Integrated Discretes Interface conditioning and interface protection in mobile appliances Rev. 8.1 — 9 March 2011 Brochure Document information Info Content Keywords Integrated Discretes, EMI filter, ESD protection, chip scale package CSP , level shifting, memory card, SD memory card, MMC, T-flash,

R7110U-40

Abstract: pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M
Contextual Info: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics

ortec

Abstract: ic 741 DIODE E678-12M pdf of 741 ic telephone hybrid R7110U-07 TPMH1174E04 ortec 142 R7110
Contextual Info: COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target PRELIMINARY DATA SEPT. 2000 FEATURES R7110U-07 APPLICATIONS ● Low excess noise ● High gain ● Operable in high magnetic fields ● Low hysteresis ● High energy physics ● Medical ● Other high precision measurements

Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code

GR-1089-CORE

Abstract: TISP3600F3 TISP3600F3SL-S TISP3700F3 SP370
Contextual Info: CO M PL IA NT TISP3600F3, TISP3700F3 *R oH S DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3600F3, TISP3700F3 IEEE Std 802.3 LAN and MAN Applications SL Package Top View Ion-Implanted Breakdown Region Precise and Stable Voltage Terminals T&G, R&G

OC100HG

Abstract: OC100 30 kv diode high voltage diode 100 kv high voltage resistor 100 kv HIGH VOLTAGE DIODE kv 50 ma
Contextual Info: OC100HG Opto Coupler • High Current Gain • High Isolation Voltage • RoHS Compliant ABSOLUTE MAXIMUM RATINGS LED ELECTRICAL CHARACTERISTICS LED • Forward DC Current 100 mA • Forward Voltage If = 20 mA 1.5 V • Surge Current 500 mA • Reverse Leakage Current

Contextual Info: ESD8104 Transient Voltage Suppressors Low Capacitance ESD Protection Diode for High Speed Data Line The ESD8104 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting

Contextual Info: ESD8104 Transient Voltage Suppressors Low Capacitance ESD Protection Diode for High Speed Data Line http://onsemi.com The ESD8104 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting

Contextual Info: SHV-02JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 1.0 kV ▪ Low Forward Voltage, VF : 2.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA

chopper transformer

Abstract: transistor BC 109 Data SKIIP DRIVER GD
Contextual Info: SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM

Contextual Info: ESD8104 Transient Voltage Suppressors Low Capacitance ESD Protection Diode for High Speed Data Line The ESD8104 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting

GR-1089-CORE

Abstract: TISP3600F3 TISP3600F3SL TISP3600F3SL-S TISP3700F3 TISP3700F3SL
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP3600F3, TISP3700F3 *R DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3600F3, TISP3700F3 IEEE Std 802.3 LAN and MAN Applications SL Package Top View Ion-Implanted Breakdown Region Precise and Stable Voltage

452 diode

Contextual Info: SKiiP 262 GDL 060 - 452 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM

Contextual Info: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio

chopper transformer

Abstract: semikron skiip 33 skiip gd 120
Contextual Info: SKiiP 262 GDL 060 - 452 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM