HIGH VOLTAGE GAAS FET Search Results
HIGH VOLTAGE GAAS FET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GC331AD7LP333KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC331BD7LQ333KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC332DD7LQ683KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC355DD7LP474KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC355XD7LP105KX17L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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HIGH VOLTAGE GAAS FET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FLL21E180IUContextual Info: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency, |
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FLL21E180IU 46dBm 2200MHz FLL21E180IU | |
FLL21E090IKContextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency, |
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FLL21E090IK 43dBm 2200MHz FLL21E090IK | |
FLL21E040IKContextual Info: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency, |
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FLL21E040IK 40dBm 2200MHz FLL21E040IK | |
FLL21E180IUContextual Info: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency, |
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FLL21E180IU 46dBm 2200MHz FLL21E180IU | |
FLL21E090IKContextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency, |
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FLL21E090IK 43dBm 2200MHz FLL21E090IK | |
7824 TO-3 package
Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
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FLL21E040IK 40dBm 2200MHz FLL21E040IK 7824 TO-3 package high power FET transistor s-parameters MA 7824. to-3 Eudyna Devices power amplifiers | |
GHzS11
Abstract: 7824 TO-3 package
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FLL21E040IK 40dBm 2200MHz FLL21E040IK GHzS11 7824 TO-3 package | |
fujitsu gaas fet L-band
Abstract: 1 RF s 640 a 931 FLL21E180IU FLL21E180
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FLL21E180IU 46dBm 2200MHz FLL21E180IU fujitsu gaas fet L-band 1 RF s 640 a 931 FLL21E180 | |
ED-4701
Abstract: FLL21E045IY
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FLL21E045IY 40dBm 2170MHz FLL21E045IY ED-4701 | |
Z3.7
Abstract: ED-4701 FLL21E045IY
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FLL21E045IY 40dBm 2170MHz FLL21E045IY Z3.7 ED-4701 | |
cw 7809
Abstract: 6822 FET FLL21E090IY transistor 6822 transistors 6822 ED-4701
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FLL21E090IY 43dBm 2170MHz FLL21E090IY cw 7809 6822 FET transistor 6822 transistors 6822 ED-4701 | |
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Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency, |
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FLL21E135IX 2170MHz FLL21E135IX | |
ED-4701
Abstract: FLL21E135IX
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FLL21E135IX 2170MHz FLL21E135IX ED-4701 | |
cw 7809
Abstract: RM110 6822 transistor 6822 transistors 6822 ED-4701 FLL21E090IY
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FLL21E090IY 43dBm 2170MHz FLL21E090IY cw 7809 RM110 6822 transistor 6822 transistors 6822 ED-4701 | |
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L-BandContextual Info: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency, |
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FLL21E060IY 2170MHz FLL21E060IY L-Band | |
R15-24
Abstract: 40dBm f1214
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FLL21E045IY 40dBm 2170MHz FLL21E045IY R15-24 f1214 | |
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Contextual Info: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This |
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AM030MH4-BI-R AM030MH4-BI-R | |
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Contextual Info: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This |
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AM010MH4-BI-R AM010MH4-BI-R | |
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Contextual Info: AM030WH4-BI-R December 2008 Rev. 0 HiFET High Voltage GaAs FET DESCRIPTION AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This |
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AM030WH4-BI-R AM030WH4-BI-R 300mA) | |
AM030MH4-BI-R
Abstract: AM030MH4-BI
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AM030MH4-BI-R AM030MH4-BI-R AM030MH4-BI | |
AM010MH4-BI-RContextual Info: AM010MH4-BI-R Aug 2010 Rev 2 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. |
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AM010MH4-BI-R AM010MH4-BI-R | |
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Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers |
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FLL21E135IX 2170MHz FLL21E135IX | |
AM030WH4-BI-RContextual Info: AM030WH4-BI-R January 2011 REV 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This |
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AM030WH4-BI-R AM030WH4-BI-R | |
AM020MH2-BI-RContextual Info: AM020MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. |
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AM020MH2-BI-R AM020MH2-BI-R | |