HIGH-POWER NPN SILICON POWER TRANSISTOR 30A, TO3 Search Results

High-Power NPN Silicon Power Transistor 30A

Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
Contextual Info: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area

NTE386

Abstract: npn 10a 800v
Contextual Info: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited

Contextual Info: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO

Contextual Info: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

bux23

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX23 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

BUX39

Abstract: transistor 110v
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

nte181

Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Contextual Info: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per

NTE385

Contextual Info: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Darlington 30A

Contextual Info: 6 1 1 5 9 5 0 MI CROSEMI CORP/ POWER Û2E ÖÖ 480 D j_0E DEjbllSTSD □00D4Û0 fl pjQ -|0020 H T EC H N O L O G Y p j c 10021 Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 60 AMPERES 250 VOLTS 0.161 4jg 0.15) (3 84) u w - FEATURES

NTE53

Abstract: TRANSISTOR 450V 5A NPN 100W
Contextual Info: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

Contextual Info: J.S.11.S.Ut/ ^zmi-donauctoi L/^ioaucti, One. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY52A Silicon NPN Power Transistor DESCRIPTION • High Current Capability • Fast Switching Speed

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.

Transistor 200V 20A

Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
Contextual Info: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)

Contextual Info: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available

SOLITRON DEVICES

Contextual Info: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon

induction cooker schematic diagram

Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W
Contextual Info: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching

c106 TRANSISTOR

Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
Contextual Info: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)

200V transistor npn 20a

Abstract: Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A
Contextual Info: S OLI TRON DEV ICE S INC ^5 DE | ä 3 bflbOE ODOafib? □ r ‘- 7 j _ / s " tPE iß y 'F © ä to l® ® _ ^ w E iÉ ro n Devices, Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* x£\

transistor 2n5330

Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

Contextual Info: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)