HIGH-SPEED SWITCHING P-CHANNEL MOS TO92 Search Results

BSP204

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode

2SJ386

Abstract: Hitachi 2SJ Hitachi DSA00389
Contextual Info: 2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SJ386

Contextual Info: 2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 2SJ386 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER V ds

BS208

Abstract: MB8075
Contextual Info: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

2SJ148

Abstract: 2SK982 transistor a 92
Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

Toshiba 2SJ

Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ148

Abstract: 2SK982
Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ148

Abstract: 2SK982 Toshiba 2SJ
Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)

Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP254; BSP254A QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc SYMBOL • High-speed switching V ds drain-source voltage Vgso gate-source

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.

2SJ386

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ386 Silicon P-Channel MOS FET ADE-208-1195 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Contextual Info: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source

MBB691

Abstract: BS108 UBB073
Contextual Info: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

2SJ148

Abstract: 2SK982
Contextual Info: TO SHIBA 2SJ148 2 S J 1 48 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS 0.45 Excellent Switching Time ton - 14ns Typ. High Forward Transfer Admittance

Contextual Info: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)

2SJ148

Abstract: 2SK982
Contextual Info: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)

TRANSISTOR D 570

Abstract: BSS110 INFINEON BSS110 B34 transistor
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in

Contextual Info: T O SH IB A 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 U nit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS E xcellent Switching Time ton = 14ns Typ. High Forward Transfer Admittance

Contextual Info: TOSHIBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 148 Unit in mm ANALOG SWITCH APPLICATIONS 5.1 M AX. INTERFACE APPLICATIONS Excellent Switching Time ft A'i : t0n = i4ns Typ. 0.55 MAX. High Forward Transfer Admittance ; |Yfs | = lQOmS (Min,)

Contextual Info: Philips Components D a ta s h eet s tatu s Product specification d a te o f issue November 1990 FEATURES • BSP204/BSP204A P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA Direct interface to C-MOS, TTL, etc. • High-speed switching

2SJ507

Abstract: Toshiba 2SJ Transistor
Contextual Info: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.