HITACHI RF APPLICATION Search Results

Contextual Info: HITACHI/ LINEAR DEVICES SbE D • 4 4 ^ 5 0 2 O D I O S I fl ■ HA11545A-RF Modulator Description The HA11545A is included RF carrier oscillator, video modulation, FM modulator, white clip level adjustment, RF carrier and antenna switch on/off.

Contextual Info: 2SC4965 Silicon N PN Epitaxial HITACHI ADE-208-006 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable o f high density mounting. Outline C M PA K ^ ^2 ^ 1 • Emitter 2. Base 3. Collector 745 2SC4965

Contextual Info: 2SC4964 Silicon N PN Epitaxial HITACHI Application VHF / UH F RF switch Features • Low Ron and high performance for RF switch, • Capable o f high density mounting. Outline MPAK 2 740 1. Emitter 2. Base 3. Collector ADE-208-005 1st. Edition 2SC4964 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Amplifire

Contextual Info: HITACHI 2SC4964-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features <# • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol

application of LC oscillator

Abstract: 2SC4264
Contextual Info: 2SC4264 Silicon NPN Epitaxial HITACHI Application VHF / UHF RF amplifier. Local oscillator, Mixer Outline CMPAK ^ ^ 2 1. Emitter 2. Base 3. Collector 569 2SC4264 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCB0

2SC4966

Abstract: Amplifire
Contextual Info: HITACHI 2SC4966 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features • Low Ron and high performance for RF switch. • Capable of high density mounting. <#• Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol

Lc 3362

Contextual Info: 2SC4229 Silicon NPN Epitaxial HITACHI Application UHF RF amplifier Outline MPAK r, 1. Emitter 2 2 - Base 3. Collector 546 2SC4229 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage VcBO 30 V Collector to emitter voltage

Hitachi PF0030

Contextual Info: PF0030 Series MOS FET Power Amplifier HITACHI Rev. 0 Sep. 1993 Pin Arrangement Features • High stability: Load VSWR = 20: 1 • Low power control current: 400 |jA • Thin package: 5 mmt • RF-B2 Ordering Information Type No Operating Frequency Application

2SC4259

Contextual Info: 2SC4259 Silicon NPN Epitaxial HITACHI Application UHF RF amplifier Outline CMPAK 2 1. Emitter 2. Base 3. Collector 557 2SC4259 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 30 V Collector to emitter voltage VcEO

ha2100

Contextual Info: HA21009MS BS Tuner Use GaAs IC Preliminary HITACHI Application September 1993 Package Information • GaAs m onolithic IC Type No._ Package • BS tuner HA21009MS MP-18A Features • 5V Operation • BS tuner IC consists o f mixer, RF AGC, IF AGO

Contextual Info: 2SC4265 Silicon NPN Epitaxial HITACHI Application VHF RF amplifier, Local oscillator, Mixer Outline C M PA K 4P’ 2 572 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage Vcao 30

rf if amplifier

Contextual Info: 2SC3494 Silicon NPN Epitaxial Planar HITACHI Application FM RF/IF amplifier Outline SPAK ! •I 23 490 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 30 V Collector to emitter voltage

Contextual Info: 3SK239A GaAs Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low vol tage operation NF = 1.3 dB Typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 1093 3SK239A

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low voltage operation NF = 1.3 dB typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 3SK239A

Contextual Info: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems HITACHI ADE-207-257 Z 1st Edition August 1998 Description The HD 15511 IF was developed for PCN (DCS 1800) cellular systems, and integrates most of the functions of a transceiver. The HD 15511 IF incorporates the bias circuit for a RF LNA, a 1st mixer, lst-IF amplifier,

Contextual Info: 3SK228 GaAs Dual Gate MES FET HITACHI ADE-208-280 1st. Edition Application UH F TV tuner RF Am plifier Outline MPAK-4 1. 2. 3. 4. Source Gatel Gate2 Drain 1087 3SK228 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vqs

bl02rn1-r62

Contextual Info: PF0031 MOS FET Power Amplifier Module for Mobile Pnone HITACHI Application PF0031: For NM T900 890 to 915 MHz Rev. 0 Sep. 1993 Pin Arrangement • RF-B2 Features • High stability: Load VSWR = 20:1 • Low power control current: 400 |jA • Thin package: 5 mm t

cq 447

Abstract: 3SK 177
Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK-4 3< . 4 ] 1• Source 2. Gatel

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK-4 s ^ÊBÊh 4 1. Source 2. G atel 3. Gate2 4. Drain

IG2U

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK—4 .A 3 , HHptft td itltO A n ic lä f ^ 1 . Source

Contextual Info: HITACHI 2SC4965 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CM PAK Features t • Low Ron and high performance for RF switch. • Capable of high density mounting. ^ . 2 Table 1 A bsolu te M a x im u m R atings Ta = 25°C

PF0145

Abstract: GSM signal processing block z650 hitachi saw GSM TCXO 900 MHz
Contextual Info: GSM RF System Evaluation Board G SM is a digital cellular telep h one application system using the H D 155101F • Variable capacitance diode: HVU355 system im ple­ and Hitachi GSM sem iconductors. The m ented in Europe, and currently System EvB is designed to verify the