HITACHI S MOSFET Search Results

2sj217

Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Contextual Info: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Contextual Info: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share

25K1772

Abstract: 2SK1763 2SJ300 2SJ214 2SJ295 2sk mosfet TO220FM 2SJ244 2SK1645 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D -IV L Series Item Package

2sk1299

Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package

HA16107FP

Contextual Info: HITACHI/ LINEAR DEVICES SIE D • 44^202 00117Ô1 HA16107FP/P, HA16108FP/P- T7S r - ö ’s - i t ' S 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are primary control switching regulator control IC’s appropriate for di­

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

Hitachi PF0030

Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

Hitachi MOSFET

Abstract: Hitachi DSA002730
Contextual Info: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)

Hitachi DSA0076

Abstract: H5N2509P
Contextual Info: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.

Hitachi DSA0076

Abstract: H5N6001P
Contextual Info: H5N6001P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A Z 2nd. Edition May 2001 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Frange)

Hitachi DSA0076

Abstract: HAT2088R
Contextual Info: HAT2088R Silicon N Channel MOSFET High Speed Power Switching ADE-208-1234 Z 1st. Edition Mar. 2001 Features • Low on-resistance • Low leakage current • High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5 7 6 3 1 2 4 1, 2, 3 Source 4 Gate

Hitachi DSA00260

Abstract: H5N6001P
Contextual Info: H5N6001P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A Z 2nd. Edition May 2001 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Frange)

B647

Abstract: transistor b647 d667 B647 transistor d667 transistor B647 AC transistor 2SD647 2SD667 FP-14DA HA16654A
Contextual Info: HA16654A, HA16664A Series PWM Controlled Switching Regulator ADE-204-055 Z Rev. 0 Dec. 2000 The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These

d667

Abstract: b647 transistor b647 d667 transistor 2SD647 B647 AC transistor B647 transistor 2SB647 2SD667 FP-14DA
Contextual Info: HA16654A, HA16664A Series PWM Controlled Switching Regulator The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET at high speed and high frequency. The standby current is limited to as small as 1.5 mA typ . These devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage,

Contextual Info: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

Contextual Info: HITACHI 3SK237-Silicon N-Channel Dual Gâte MOSFET Application C M P A K -4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage opération 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C

40673 MOSFET

Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E

SIEMENS 800

Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

2SK1254

Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching