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    HL6312G Price and Stock

    Ushio Opto Semiconductors Inc HL6312G

    Laser Diode MQW-LD 640nm 5mW 3-Pin - Trays (Alt: HL6312G-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6312G Tray 12 Weeks, 6 Days 125
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    • 1000 $8.6052
    • 10000 $7.6866
    Buy Now

    HL6312G Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6312G Hitachi Semiconductor Original PDF
    HL6312G OpNext AlGaInP Laser Diodes Original PDF
    HL6312G Renesas Technology AlGaInP Laser Diode Original PDF
    HL6312G98 OpNext Laser Diode, 5mW Power, 640nm Wave Length, 45mA Current Original PDF
    HL6312G98-A OpNext Laser Diode: 5mW Power: 640nm Wave Length: 45mA Current Original PDF

    HL6312G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    208017

    Abstract: No abstract text available
    Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types


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    PDF HL6312G/13G HL6312G/13G ODE-208-017 HL6312G/13G: HL6312G HL6313G 208017

    HL6312G

    Abstract: HL6313G Hitachi DSA00230
    Text: HL6312G/13G AlGaInP Laser Diodes ADE-208-190G Z 8th Edition Dec. 2000 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser


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    PDF HL6312G/13G ADE-208-190G HL6312G/13G HL6312G/13G: HL6312G HL6312G HL6313G Hitachi DSA00230

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6312G AIGaInP Laser Diode 638nm/5mW Features: Outline • Visible light output:638nm Typ.  Optical output power: 5mW CW  Low operating voltage: 2.7V Max.  Built-in photodiode for monitoring laser output  TM mode oscillation  Single transverse mode


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    PDF HL6312G 638nm/5mW 638nm HL6312G

    Hitachi DSA002742

    Abstract: No abstract text available
    Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63µm band AlGaInp laser diode with multi quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in bar code readers, laser


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    PDF HL6312G ADE-208-190 HL6312G 633nm Rati4005-1835 D-85622 Hitachi DSA002742

    208017

    Abstract: ODE-208-017 HL6312G HL6313G
    Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types


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    PDF HL6312G/13G ODE-208-017 HL6312G/13G HL6312G/13G: HL6312G HL6313G 208017 ODE-208-017 HL6312G HL6313G

    He-Ne Laser Power Supply circuits

    Abstract: HL6312G HL6313G
    Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190I Z Rev.9 Mar. 2005 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser


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    PDF HL6312G/13G ODE-208-190I HL6312G/13G HL6312G/13G: HL6312G HL6313G He-Ne Laser Power Supply circuits HL6312G HL6313G

    HL6312G

    Abstract: HL6313G
    Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190H Z Rev.8 Jan. 2003 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser


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    PDF HL6312G/13G ODE-208-190H HL6312G/13G HL6312G/13G: HL6312G HL6313G HL6312G HL6313G

    Untitled

    Abstract: No abstract text available
    Text: HL6312G/13G ODE-208-017A Z Rev.1 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types


    Original
    PDF HL6312G/13G ODE-208-017A HL6312G/13G HL6312G/13G: HL6312G

    Untitled

    Abstract: No abstract text available
    Text: HL6312G/13G ODE2008-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types


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    PDF HL6312G/13G HL6312G/13G ODE2008-00 HL6312G/13G: HL6312G HL6313G

    Untitled

    Abstract: No abstract text available
    Text: HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers , laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high


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    PDF HL6312/13G HL6312/13G HL6312/13G: HL6312G HL6313G

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


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    PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    opnext

    Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


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    PDF D-85622 opdb-090103 opnext HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    PDF 658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011

    HL6312G

    Abstract: 1550 laser diode infrared Laser diode 336-1027-785 Laser Diode Mounts 300-0380-780 lens for laser diode lens laser diode Aspheric Lens TO Can Optima Precision
    Text: Laser Diode Mounting Kits For Ø5.6mm and Ø9mm Laser Diodes — Complete Mounting System with Collimating Lens If your work involves laser diodes, you’ll appreciate the benefits of Optima’s laser diode mounting systems. Components in the system facilitate mounting a laser diode, collimating or focusing the beam, and aligning the beam


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    PDF HL6312G 01JAN01 HL6312G 1550 laser diode infrared Laser diode 336-1027-785 Laser Diode Mounts 300-0380-780 lens for laser diode lens laser diode Aspheric Lens TO Can Optima Precision

    HL6312G

    Abstract: HL6335G HL6336G Hitachi DSA0064
    Text: HL6335G/36G Circular Beam Low Operating Current ADE-208-1419C Z Rev.3 Mar. 2002 Description The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are


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    PDF HL6335G/36G ADE-208-1419C HL6335/36G HL6335/36G: D-85622 D-85619 HL6312G HL6335G HL6336G Hitachi DSA0064

    hitachi DC9300

    Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
    Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes


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    PDF 635nm 830nm HE7601 HE8404 HE8807 HE8811 HE8812 HE7601SG HE8404SG hitachi DC9300 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW

    650nm 50mw

    Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
    Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits


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    PDF ADE-508-011C HL8325G 650nm 50mw 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


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    PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: HL6340MG/41MG Circular Beam Low Operating Current ADE-208-1437B Z Rev.2 Mar. 2002 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These


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    PDF HL6340MG/41MG ADE-208-1437B HL6340MG/41MG HL6340MG/41MG: HL6340MG Hitachi DSA00280

    HL7806

    Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
    Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G


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    PDF HL6314M HL6316G HL6411G* HL6315G HL6312G 6313G HL6720G HL6724M HL6712G HL6722G HL7806 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851

    Untitled

    Abstract: No abstract text available
    Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63|im band AlGalnp laser diode with multi quantumwell (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in barcode readers, laser


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    PDF HL6312G ADE-208-190 HL6312G 633nm 10pes

    Untitled

    Abstract: No abstract text available
    Text: HL6312G AIGalnP LD Description H L 6 3 1 2 G is a 0 .6 3 p m A IG a ln P la se r d io d e w ith a m u lti-q u a n tu m w ell M Q W stru c tu re . W a v e le n g th is e q u a l to H e -N e G a s laser. It is s u ita b le as a lig h t s o u rc e fo r b a r c o d e re a d e rs, la s e r le v e le rs an d v a rio u s o th e r


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    PDF HL6312G

    Untitled

    Abstract: No abstract text available
    Text: HL6312/13G AlGalnP Laser Diodes HITACHI February 1997 Description The HL6312/13G are 0.63 Am band AlGalnP laser diodes with a multi-quantum well (MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser


    OCR Scan
    PDF HL6312/13G HL6312/13G HL6312/13G: HL6312G HL631h

    Untitled

    Abstract: No abstract text available
    Text: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser


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    PDF HL6312/13G HL6312G/HL6313G HL6312/13G: HL6312G HL6313G